The atomic structure of the Si-rich -SiC͑001͒ 3ϫ2 surface reconstruction is solved by grazing-incidence x-ray diffraction with surface and subsurface structure determination. The reconstruction involves three Si atomic planes ( 1 3 ϩ 2 3 ϩ1 Si monolayers͒ in qualitative agreement with ab initio theoretical calculations. The first plane includes Si dimers that are asymmetric with a 0.1 Å height difference between Si atoms while the second plane includes Si dimers having alternating long ͑2.41 Å͒ and short ͑2.26 Å͒ lengths resulting in long-range influence with no buckling of the top surface dimers, in strong contrast to other group-IV semiconductors. Dimerization is also shown to take place in the third Si plane with a dimer having a bond length at 2.38 Å. In addition, a large Si interlayer spacing is found between the reconstructed planes at 1.56 Å, significantly larger than that for bulk SiC ͑1.09 Å͒ and Si ͑1.35 Å͒ interlayer distances, indicating a very open surface. The results suggest that stress is at the origin of this complex surface organization.