Optical backplanes with integrated polymer waveguides

Moisel, J.; Guttmann, J.; Huber, Hans-Peter; Krumpholz, O.; Rode, M.; Bogenberger, Richard; Kuhn, Klaus-Peter

doi:10.1117/1.602413

Cited by 42 publications

(10 citation statements)

References 17 publications

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“…Therefore, additional signal amplification within the board is necessary around 850 nm, which is currently considered for optical interconnects in PCBs [335][336][337][338] due to the maturity of VCSEL technology at this wavelength. Since, polymer channel waveguides are compatible with processes used in the PCB industry it follows that integration of amplifying polymer materials into optical backplanes, which is still in a very formative stage, can be an efficient solution to the problem of maintaining a sufficiently high optical power level.…”

Section: Optical Interconnectsmentioning

confidence: 99%

Organic solid‐state integrated amplifiers and lasers

Grivas

Pollnau

2012

Laser & Photonics Reviews

212

202

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Solid-state organic amplifiers and lasers are attractive for hybrid integration due to their compatibility with different material platforms, straightforward processing, and possibility to optimize easily their optical and electronic properties by molecular engineering. Advances in the gain medium design and synthesis in combination with new resonator architectures led to tremendous improvements in temporal and spectral properties, lifetime stability, gains produced and operating threshold powers, which triggered interest in their use for a broad range of integrated photonic applications. In this contribution, the current state-of-the-art in the field of organic solid-state amplifiers and lasers is reviewed from the aspects of fabrication technology, gain materials, and device performance. Furthermore, examples of the progress of this technology from a laboratory curiosity to one that demonstrates practical integrated photonic applications are highlighted. An outlook is also provided on research areas and applications that are likely to shape further developments of this technology. (Figure reprinted from [296],

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Section: Optical Interconnectsmentioning

confidence: 99%

Organic solid‐state integrated amplifiers and lasers

Grivas

Pollnau

2012

Laser & Photonics Reviews

212

202

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“…It has a fourlevel-energy structure and a large emission cross-section, which provides significant gain at low excitation power for optical amplification. Emission on the 4 F 3/2 → 4 I 9/2 ground-state transition around 865-930 nm is of interest for signal amplification in integrated optical applications, e.g., data transmission in optical interconnects [13][14][15][16] and medical diagnostics [17,18]. Furthermore, the excited-state transition 4 F 3/2 → 4 I 13/2 at 1330 nm, corresponding to the wavelength of the second standard telecommunication window, is used for high-speed amplification of optical signals at the telecommunication O-band (1260-1360 nm).…”

Section: Introductionmentioning

confidence: 99%

High-gain Al2O3:Nd3+ channel waveguide amplifiers at 880 nm, 1060 nm, and 1330 nm

et al. 2010

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Neodymium-doped aluminum oxide films with a range of Nd 3+ concentrations are deposited on silicon wafers by reactive co-sputtering, and single-mode channel waveguides with various lengths are fabricated by reactive ion etching. Photoluminescence at 880, 1060, and 1330 nm from the Nd 3+ ions with a lifetime of 325 µs is observed. Internal net gain at 845-945 nm, 1064, and 1330 nm is experimentally and theoretically investigated under continuous-wave excitation at 802 nm. Net optical gain of 6.3 dB/cm at 1064 nm and 1.93 dB/cm at 1330 nm is obtained in a 1.4-cm-long waveguide with a Nd 3+ concentration of 1.68 × 10 20 cm −3 when launching 45 mW of pump power. In longer waveguides a maximum gain of 14.4 dB and 5.1 dB is obtained at these wavelengths, respectively. Net optical gain is also observed in the range 865-930 nm and a peak gain of 1.57 dB/cm in a short and 3.0 dB in a 4.1-cm-long waveguide is obtained at 880 nm with a Nd 3+ concentration of 0.65 × 10 20 cm −3 . By use of a rate-equation model, the gain on these three transitions is calculated, and the macroscopic parameter of energy-transfer upconversion as a function of Nd 3+ concentration is derived. The high internal net gain indicates that Al 2 O 3 :Nd 3+ channel waveguide amplifiers are suitable for providing gain in many integrated optical devices.

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“…Currently optical on-chip interconnects are still subject of intensive research work whereas optical off-chip interconnects have reached a state that there are no serious technical reasons which are against a widespread use in the near future. Most of the proposed optical interconnects for fast board-to-board communication are based on backplane approaches to replace the electrical bus by an optical bus 18,19 . Backplanes are a source for high latency and limited bandwidth in principle, no matter if optical or electronic solutions will be used.…”

Section: Introductionmentioning

confidence: 99%

Parallel optical interconnects with mixed-signal OEIC and fibre arrays for high-speed communication

Fey¹,

Hoppe²,

Loos³

et al. 2004

SPIE Proceedings

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We present a system for direct parallel optical data communication between integrated circuits on neighboured printed circuit boards based on a monolithic integrated CMOS smart pixel array, fibre arrays, and VCSELs. The advantage of our system versus backplane systems is the direct data transfer through the space avoiding planar and area consuming interconnections. The detector chip allows a data rate of 625 Mbit/s per link and is cycled by an optical clock. A simulation of the chip layout showed 260 % more performance versus electrical off-chip interconnects. In principle an 8×8 data transfer is feasible allowing a data rate of 40 Gbit/s. The detector combines an optical receiver array with a digital processor array which executes image processing algorithms. The optical receiver is formed by a PIN photodiode with a diameter of 40 µm, a transimpedance amplifier (TIA) and a decision-making postamplifier. The measured responsivity of the photodiode without antireflection coating is R=0.382 A/W at an optical wavelength of 670 nm. The TIA consists of a CMOS inverter and a PMOS transistor forming the feedback resistor. Together with the postamplifier, formed by a chain of five CMOS inverters and attaining digital CMOS levels, a data rate of 625 Mbit/s is achieved.

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Optical backplanes with integrated polymer waveguides

Cited by 42 publications

References 17 publications

Organic solid‐state integrated amplifiers and lasers

Organic solid‐state integrated amplifiers and lasers

High-gain Al2O3:Nd3+ channel waveguide amplifiers at 880 nm, 1060 nm, and 1330 nm

Parallel optical interconnects with mixed-signal OEIC and fibre arrays for high-speed communication

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