Optical Bandgap Tunability of Silicon Nanocrystals Fabricated by Inductively Coupled Plasma CVD for Next Generation Photovoltaics

Mavilla, Narasimha Rao; Solanki, Chetan Singh; Vasi, J.

doi:10.1109/jphotov.2013.2272876

Cited by 6 publications

(3 citation statements)

References 41 publications

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“…The practical efficiency limit in production is estimated to be approximately 26% [2] which is already rapidly being approached. In order to reach higher efficiencies, it has been suggested that Si quantum dot (QD) thin-films with their bandgap tunability [3] and high elemental abundance could be used in conjunction with c-Si to create all-Si tandem solar cells [4]- [6].…”

Section: Introductionmentioning

confidence: 99%

High Si content SRO/SiO2 bilayer superlattices with boron and phosphorus doping for next generation Si quantum dot photovoltaics

Yang

Nomoto

Lin

et al. 2015

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)

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Si quantum dots or interchangeably Si nanocrystals are promising materials for all-Si tandem solar cells in next generation photovoltaics. Si QDs in this study were fabricated by annealing sputtered Si rich oxide/SiO 2 (SRO/SiO 2 ) bilayer superlattice thin-films. Advantages of high Si content SRO layers include lower resistivity and higher light absorption crosssections which are more suitable for photovoltaic devices. However, theoretically high Si content SRO produces greater size distribution and larger Si nanocrystals which in this case slightly lowers the bandgap towards that of crystalline Si. This study investigates the properties of high Si content SRO/SiO 2 bilayer superlattice thin-films and the effect of boron and phosphorus doping.Index Terms -Boron, Doping, Phosphorus, Magnetron Sputtering, Si Quantum Dots, Si Nanocrystals. 978-1-4799-7944-8/15/$31.00 ©2015 IEEE 978-1-4799-7944-8/15/$31.00 ©2015 IEEE

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Section: Introductionmentioning

confidence: 99%

High Si content SRO/SiO2 bilayer superlattices with boron and phosphorus doping for next generation Si quantum dot photovoltaics

Yang

Nomoto

Lin

et al. 2015

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)

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“…The deposited lms are associated with overall low hydrogen content, varying between $1.9-14.2 at% with the lowering of growth temperature from 400-100 C, which is smaller compared to the nc-Si lms deposited by glow discharge plasma-CVD. 55,56 A very high hydrogen content in the lms in turn leads to poor material performance (e.g., degradation upon light exposure, etc.) in solar cells and other applications.…”

Section: Plasma Chemical Reactions: Growth Of Nc-si/a-sin X :H Qds Th...mentioning

confidence: 99%

Low temperature plasma processing of nc-Si/a-SiN_x:H QD thin films with high carrier mobility and preferred (220) crystal orientation: a promising material for third generation solar cells

Sain

Das

2014

RSC Adv.

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“…The applications of Si‐NCs were already shown in field‐effect light‐emitting devices (FELEDs), photovoltaics, and memory structures based onto photoluminescence (PL) or non‐volatile semiconductor memory (NVSM) devices . Various fabrication methods have been used to obtain Si‐NCs with the possibility to control their stoichiometry and/or thickness including reactive magnetron sputtering, thermal beam evaporation, or CVD‐based processes …”

Section: Introductionmentioning

confidence: 99%

Stress‐and‐Sense Investigation of Memory Effect in Si‐NCs MIS Structures

Mazurak

Jaśiński

Mroczynski

2018

Physica Status Solidi (b)

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Silicon nanocrystals have been recently investigated for potential applications in modern silicon optoelectronics and photonics. In this work, co-doped silicon nanocrystals embedded in hafnium oxide thin films have been introduced to metal-insulator-semiconductor (MIS) structures. The fabricated test devices are investigated for the nanocrystals charging effect and the charge retention properties parametrized by flat-band voltage shift. Electrical measurements including the stress-and-sense procedure are carried out. The effect of bias parameters on memory effect is discussed in terms of device capacitance, flat-band voltage shift, and retention time. The reported retention of flat-band voltage values extrapolated to 10 years seems to be promising for future applications in memory devices.

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Optical Bandgap Tunability of Silicon Nanocrystals Fabricated by Inductively Coupled Plasma CVD for Next Generation Photovoltaics

Cited by 6 publications

References 41 publications

High Si content SRO/SiO2 bilayer superlattices with boron and phosphorus doping for next generation Si quantum dot photovoltaics

High Si content SRO/SiO2 bilayer superlattices with boron and phosphorus doping for next generation Si quantum dot photovoltaics

Low temperature plasma processing of nc-Si/a-SiN_x:H QD thin films with high carrier mobility and preferred (220) crystal orientation: a promising material for third generation solar cells

Stress‐and‐Sense Investigation of Memory Effect in Si‐NCs MIS Structures

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Optical Bandgap Tunability of Silicon Nanocrystals Fabricated by Inductively Coupled Plasma CVD for Next Generation Photovoltaics

Cited by 6 publications

References 41 publications

High Si content SRO/SiO2 bilayer superlattices with boron and phosphorus doping for next generation Si quantum dot photovoltaics

High Si content SRO/SiO2 bilayer superlattices with boron and phosphorus doping for next generation Si quantum dot photovoltaics

Low temperature plasma processing of nc-Si/a-SiNx:H QD thin films with high carrier mobility and preferred (220) crystal orientation: a promising material for third generation solar cells

Stress‐and‐Sense Investigation of Memory Effect in Si‐NCs MIS Structures

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Low temperature plasma processing of nc-Si/a-SiN_x:H QD thin films with high carrier mobility and preferred (220) crystal orientation: a promising material for third generation solar cells