1994
DOI: 10.1143/jjap.33.3393
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Optical Beam Induced Current Techniques for Failure Analysis of Very Large Scale Integrated Circuits Devices

Abstract: In failure analysis of complementary metal oxide semiconductor (CMOS) very large scale integrated (VLSI) circuits using optical beam induced current (OBIC) techniques, circuit analysis was carried out by studying the flow path of detected photocurrents for the first time. This circuit analysis revealed that the OBIC current can be detected even on a good unit. Furthermore, this gave a clear explanation as to the reason why the suspected failure site detected by OBIC and emission microscopy analyses d… Show more

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Cited by 13 publications
(3 citation statements)
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“…It may be noted that a number of studies have been carried out to explore the capability of OBIC microscopy for rapid identification of internal fail locations and defect sites in semiconductor ICs, including photodiodes, semiconductor lasers and CMOS devices (Grasso et al, 1989; Komoda & Shimizu, 1994; Mitsuhashi et al, 1992; Takasu, 2001). Chin et al, introduced Single Contact Optical Beam Induced Currents (SCOBIC) as a novel failure analysis technique to image multiple junctions of all transistors in an IC (both bipolar and sub‐micron CMOS devices) simply by connecting to a point common to all transistors (Chin et al, n.d.; Chin et al, 2001).…”
Section: Microscopic Measurements Of Obicmentioning
confidence: 99%
“…It may be noted that a number of studies have been carried out to explore the capability of OBIC microscopy for rapid identification of internal fail locations and defect sites in semiconductor ICs, including photodiodes, semiconductor lasers and CMOS devices (Grasso et al, 1989; Komoda & Shimizu, 1994; Mitsuhashi et al, 1992; Takasu, 2001). Chin et al, introduced Single Contact Optical Beam Induced Currents (SCOBIC) as a novel failure analysis technique to image multiple junctions of all transistors in an IC (both bipolar and sub‐micron CMOS devices) simply by connecting to a point common to all transistors (Chin et al, n.d.; Chin et al, 2001).…”
Section: Microscopic Measurements Of Obicmentioning
confidence: 99%
“…For instance, the very short temporal width of ultrafast laser pulses enables generation of very high frequency current on fast photo-detectors [12]. Through these unique capabilities we introduces the novel method of optical beam induced current (OBIC) [13][14][15][16][17] that is used to map the frequency transfer properties of optically active electronic devices. This technique is based on and is hence termed radio frequency (RF) OBIC [12].…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4] In combination with confocal reflected-light imaging, a variety of failure modes can be identified nondestructively by OBIC. However, front surface OBIC is limited by nonuniform light transmission through the multiple levels of metallic interconnects and power distribution planes used in modern IC technology.…”
Section: Introductionmentioning
confidence: 99%