1990
DOI: 10.1016/0167-9317(90)90051-t
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Optical beam induced currents in MOS transistors

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Cited by 10 publications
(4 citation statements)
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“…In the same way as light emission, the techniques based on laser stimulation have been mainly developed in failure analysis [8] [9]. On the one hand, the laser stimulation at a 1064 nm wavelength allows to induce a local photocurrent [10], either to detect a latch-up mechanism and inter-level shorts or to locate open circuits and direct semiconductor damage (LIVA, OBIC). On the other hand, the laser stimulation at a 1340 nm wavelength can also induce a thermal variation to detect a resistance variation by measuring the power consumption across a circuit (TIVA, OBIRCH).…”
Section: Introductionmentioning
confidence: 99%
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“…In the same way as light emission, the techniques based on laser stimulation have been mainly developed in failure analysis [8] [9]. On the one hand, the laser stimulation at a 1064 nm wavelength allows to induce a local photocurrent [10], either to detect a latch-up mechanism and inter-level shorts or to locate open circuits and direct semiconductor damage (LIVA, OBIC). On the other hand, the laser stimulation at a 1340 nm wavelength can also induce a thermal variation to detect a resistance variation by measuring the power consumption across a circuit (TIVA, OBIRCH).…”
Section: Introductionmentioning
confidence: 99%
“…The photoelectric laser stimulation is a failure analysis technique that uses a scanning laser beam to induce a current flow. This one can be collected and analyzed to generate images that represent the semiconductor sample properties [10]. Indeed, when the laser beam scans the surface of the sample, some electrons into the conduction band are excited thanks to the 'single-photon absorption' phenomenon.…”
Section: Introductionmentioning
confidence: 99%
“…This one can be collected and analyzed to generate images that represent the semiconductor sample properties [10]. Indeed, when the laser beam scans the surface of the sample, some electrons into the conduction band are excited thanks to the 'single-photon absorption' phenomenon.…”
Section: Introductionmentioning
confidence: 99%
“…On the one hand, the laser stimulation at a 1064 nm wavelength allows to induce a local photocurrent [10], either to detect a latch-up mechanism and inter-level shorts or to locate open circuits and direct semiconductor damage (LIVA, OBIC). On the other hand, the laser stimulation at a 1340 nm wavelength can also induce a thermal variation to detect a resistance variation by measuring the power consumption across a circuit (TIVA, OBIRCH).…”
Section: Introductionmentioning
confidence: 99%