Optical bistability in hybrid AlAs/GaAs Bragg reflectors

Knigge, S.; Zumkley, S.; Wingen, G.; Humbach, O.; Dragoman, Mircea; Chaix, C.; Jaeger, Dieter

doi:10.1117/12.147909

Cited by 5 publications

(1 citation statement)

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“…For that purpose, a continuous wave light is sent from the central unit to the base station via a GI-POF that is coupled to the modulator optical terminal. The light is reflected by the transceiver with a reflectivity that is a function of the received RF signal [3], [4]. This configuration eliminates the need for an optical source integrated in the base station, resulting in increased compactness and reduced power requirements.…”

Section: Dual Band Optical Transceivermentioning

confidence: 99%

Dual Band LTCC-Based Wireless Transceiver with Optical Interface using Polymer Fiber

Pergola

Bulters

Gindera

et al. 2007

2007 IEEE/MTT-S International Microwave Symposium

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The design of a dual band base station for IEEE 802.11a/b/g WLANs, using a radio over fiber approach, is presented. For the first time LTCC technology is being used to couple a graded index polymer optical fiber (GI-POF) to a vertical electroabsorption transceiver. The presented approach enables full optical transceiving functionalities and employs only one optical fiber to connect the base station and the central unit. The need for a light source to be integrated into the base station is eliminated, resulting in a cost effective and power saving module.Index Terms Bragg modulator, electroabsorption transceiver, LTCC, polymer optical fiber (POF), radio over fiber (RoF), Wireless LAN.

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Section: Dual Band Optical Transceivermentioning

confidence: 99%

Dual Band LTCC-Based Wireless Transceiver with Optical Interface using Polymer Fiber

Pergola

Bulters

Gindera

et al. 2007

2007 IEEE/MTT-S International Microwave Symposium

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Modeling of a low-intensity electro-optical semiconductor switching device due to intrinsic photoconductivity

Ivanov

Haug

1994

Journal of Applied Physics

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An electro-optical device consisting of a stack of undoped alternating layers of narrow- and wide-gap materials (e.g., GaAs/AlGaAs) together with a series resistor under constant voltage bias is analyzed theoretically. The GaAs heterolayers with a width in the order of a carrier mean free-path are a photo-active region of this vertical device. The device operates only in the presence of a low-intensity light beam due to the intrinsic photoconductivity of the active region. The Franz–Keldysh effect, the strong accumulation of the photocarriers in the photo-active layers due to the charge separation in the presence of the static electric field, and the ballistic component of the total current are responsible for the unusually large electro-optical nonlinearity of the device. Kirchhoff’s law for the electrical circuit of the device provides a sensitive feedback between the voltage drop over the layer and the photocurrent. In a Fabry–Perot cavity a room temperature electro-optical bistabitity is obtained at light intensities less than 10 mW/cm2 with a switching time of about 100 ns.

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Analysis of an electro-optical switching device due to intrinsic photoconductivity

Ivanov

Haug

1994

Semicond. Sci. Technol.

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We analyse an electro-optical device consisting of a stack of undoped alternating layers of narrow-and wide-gap materials (e.g. GaAdAIGaAs) together with a series resistor under constant voltage bias. The device depends crmially on the photoconduc1iv;ty of the narrow-gap layers with a wioth of the order of a carrier mean free path. The Franz-Keldysh etfect, the charge separation of photoexcited carriers in a static field, and the ballistic pari of the current are responsible for the resulting very large electro-optical nonl'nearity. In a Fabry-Perot cav:ty a room temperature electro-optical bistability is obtained at light intensities smaller than 10 mWcm-2.

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Optical bistability in hybrid AlAs/GaAs Bragg reflectors

Abstract: We report about measurements of optical bistability in hybrid AlAs/GaAs Bragg reflectors. We have estimated an optical switching energy of 0.1 fJpm2, a switching intensity of about 1 Wcm2 and an electrooptical modulation of 40 % using a voltage swing of 60 V.

Cited by 5 publications

References 0 publications

Dual Band LTCC-Based Wireless Transceiver with Optical Interface using Polymer Fiber

Dual Band LTCC-Based Wireless Transceiver with Optical Interface using Polymer Fiber

Modeling of a low-intensity electro-optical semiconductor switching device due to intrinsic photoconductivity

Analysis of an electro-optical switching device due to intrinsic photoconductivity

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