235 wileyonlinelibrary.com COMMUNICATION www.MaterialsViews.com www.advopticalmat.deOwing to its attractive optical and electrical properties, large surface to volume ratio, and ease of surface modifi cation, porous silicon (pSi) has been extensively studied in a variety of applications, such as light emitting diodes, [ 1 ] photodetectors, [ 2 ] optical switches, [ 3 ] lithium ion batteries, [ 4 ] and label-free optical detection of numerous analytes (bacteria, enzymes, viruses, DNA, gases). [5][6][7][8][9][10][11][12][13][14][15][16][17][18] Conventionally, pSi fi lms are fabricated by anodization of single crystal silicon wafers, leading to fi lms possessing two-dimensional, cylindrical mesopores with thicknesses controlled by the anodization kinetics of doped silicon in HF-bearing solutions. [19][20][21] The use of applied currents with HF-bearing solutions makes integration with silicon-oninsulator platforms diffi cult. The anodized pSi optical microcavities to date have exhibited modest quality factors. [21][22][23][24][25][26][27][28][29][30] To the best of our knowledge, the largest Q-factor is ∼3380 with a free-standing resonator [ 21 ] and ∼1530 for a multilayer resonator. [ 22,23 ] Moreover, there is a tradeoff between the Q-factors and accessibility of pSi multilayer resonators for sensing. [ 13,14 ] A high Q-factor multilayer resonator requires a larger number of high/low refractive index bilayers. In such structures, it is challenging for the analyte to penetrate into the center defective layer and be detected. [12][13][14] In this paper, thin pSi fi lms have been formed on top of SOI travelling-wave microresonators without the need for doped silicon, applied currents, or HF-bearing solutions. A modifi ed shape-preserving, magnesiothermic reduction-based process [31][32][33][34] has been used to selectively convert thin silica fi lms, formed by thermal oxidation of SOI platforms, into thin pSi fi lms possessing three-dimensionally-interconnected pores. This process has been thermodynamically designed to allow for reaction only with silica (not with the underlying silicon), so that the thickness of the pSi fi lm can be precisely controlled via adjustment of the silica fi lm thickness (tailorable to within 1 nm by thermal oxidation of silicon). [ 35,36 ] The large internal specifi c surface area (≥500 m 2 /g) associated with uniformly-distributed, micro/mesopores in pSi formed by this process [ 32,33 ] provides for greater adsorption of small analytes for enhanced detection sensitivity, while the thin, uniform nature of the pSi fi lms allows for high Q-factors and high spectral resolution.An ultra compact, high Q-factor SOI microresonator, clad with a thin uniform layer of magnesiothermically-formed porous silicon, is illustrated in Figure 1 . SOI optical travellingwave microresonators have emerged as promising optical sensors due to their high Q-factors, compatibility with mature semiconductor fabrication techniques, and ease of integration with microelectronic components. [37][38][39][40][41][42] Hig...