Optical characterisation of titanium-nitride-based solar control coatings

Claesson, Y.; Georgson, M.; Roos, Arne; Ribbing, Carl G.

doi:10.1016/0165-1633(90)90035-y

Cited by 52 publications

(21 citation statements)

References 11 publications

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“…TiN can serve as a replacement for Au. [109] The dielectric layer can be of several different kinds, such as Bi 2 O 3 , SnO 2 , TiO 2 , ZnO, and ZnS. The multilayer structure may also include corrosion-impeding layers, such as Al 2 O 3 .…”

Section: Spectrally Selective Thin Filmsmentioning

confidence: 99%

Solar Energy Materials

Granqvist¹

2003

Advanced Materials

346

145

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Solar energy materials have properties tailored to meet requirements set by the spectral distribution, angle of incidence, and intensity of the electromagnetic radiation prevailing in our natural surroundings. Specifically, the optimization can be performed with regard to solar irradiation, thermal emission, atmospheric absorption, visible light, and photosynthetic efficiency. Materials for thermal and electrical conversion of solar energy in man‐made collectors, as well as for energy‐efficient passive design in architecture, are typical examples. This paper reviews solar energy materials with emphasis on the thermal applications of a variety of types. Electrical applications are given a more cursory exposition, the reason being that a systems perspective—rather that a materials perspective—is most fruitful in this case.

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Section: Spectrally Selective Thin Filmsmentioning

confidence: 99%

Solar Energy Materials

Granqvist¹

2003

Advanced Materials

346

145

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“…[1][2][3] Furthermore, they are widely used as optical and decorative coatings. [4][5][6] Especially with regard to hot corrosion resistance, chromium nitride coatings evidence promising properties. 7,8 W-N thin films were examined as a diffusion barrier for Al and Cu metallization in ultralarge scale integrated circuits.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure and mechanical properties of hard coatings from the chromium–tungsten nitride system

Hones

Diserens

Sanjinés

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Synthesis and mechanical properties of boron suboxide thin filmsCr 1Ϫx W x N y films were deposited on silicon by rf reactive magnetron sputtering. The phase and texture were determined by x-ray diffraction analysis. All the films crystallize in the fcc phase. Scanning tunneling microscopy revealed a finely grained surface morphology. The grain size decreases with increasing tungsten content in the films. Quantitative values can be assigned to morphology differences through the measurement of the optical reflectivity. Hardness values obtained by nanoindentation, and the packing density significantly increase upon addition of a small percentage of W to CrN. The electronic structure was analyzed using x-ray photoelectron spectroscopy. As deduced from core level binding energy values ͑chemical shifts͒, the W 2 N and Cr 1Ϫx W x N films are more covalent than binary CrN. The higher hardness values in W 2 N and Cr 1Ϫx W x N compounds compared to that of CrN are related to their prominent covalent bonding character between the metal and nitrogen ions.

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“…3 The properties of TiN x also lead to a great number of applications that include more efficient UHV equipment, 4 high quality heat mirrors, 5 various hard coatings, 6 and photothermal conversion of solar energy. 7 It is also used for diffusion barriers in microcircuits, 8 which is interesting because our data shows that TiN itself seems to diffuse.…”

Section: Introductionmentioning

confidence: 96%

Diffusion of TiN into aluminum films measured by soft x-ray spectroscopy and Rutherford backscattering spectroscopy

Schüler

Ederer

Ruzycki

et al. 2001

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Understanding the atomic bonding properties at the interface between thin films is crucial to a number of key modern technical devices, including semiconductor integrated circuits, magnetic recording media, batteries, and even solar cells. Semiconducting materials such as titanium nitride (TiNx) are widely used in the manufacturing of modern electronic devices, requiring a wealth of information about its electronic structure. We present data from soft x-ray emission, soft x-ray absorption, and Rutherford backscattering spectroscopy experiments involving a sample consisting of a 40 nm TiN layer on top of an aluminum film 600 nm thick. Soft x-ray emission spectroscopy and near-edge x-ray absorption fine structure (NEXAFS) spectroscopy are tools that provide a nondestructive, atomic site-specific probe of the interface, where the electronic structure of the material can be mapped out element by element. Rutherford backscattering spectroscopy (RBS) measurements supply data on the elemental composition and depth profiling of the sample. From these measurements, we show that the Ti and the N diffuse into the Al film to form an equivalent material depth of about 4.5 nm, and the NEXAF structure reveals that the nitrogen has probably formed AlN, and the Ti has also diffused to form a titanium–aluminum compound.

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Optical characterisation of titanium-nitride-based solar control coatings

Cited by 52 publications

References 11 publications

Solar Energy Materials

Solar Energy Materials

Electronic structure and mechanical properties of hard coatings from the chromium–tungsten nitride system

Diffusion of TiN into aluminum films measured by soft x-ray spectroscopy and Rutherford backscattering spectroscopy

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