Optical characterization and crystal field calculation of Er3+ in AlN epilayers

Kallel, Tasnim; Koubaa, T.; Dammak, M.; Wang, J.; Jadwisienczak, Wojciech M.

doi:10.1016/j.jlumin.2012.06.021

Cited by 8 publications

(4 citation statements)

References 27 publications

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“…To this regard the metal substitution site is the most probable. It is what is generally observed by channelling experiments when the rare earths are implanted on AlN and GaN films grown by MBE [37] or HVPE [38] or when co-deposited in AlN and GaN films grown by MOCVD [39] [40] and is also consistent with the different available theoretical calculations performed on those systems (crystal field based [41], [39] or electronphonon coupling based [42]). However, crystallographically speaking, tetrahedral and octahedral sites of the hexagonal lattice also have to be envisaged.…”

Section: X-ray Diffraction Investigationsupporting

confidence: 89%

Erbium location into AlN films as probed by spatial resolution experimental techniques

Brien

Boulet

2015

Acta Materialia

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This paper presents a thorough experimental investigation of erbium-doped aluminium nitride thin films prepared by R.F. magnetron sputtering, coupling Scanning Transmission Electron Microscopy X-ray-mapping imagery, conventional Transmission Electron Microscopy and X-ray diffraction. The study is an attempt of precise localisation of the rare earth atoms inside the films and in the hexagonal wü rtzite unit cell. The study shows that AlN:Er x is a solid solution even when x reaches 6 at.%, and does not lead to the precipitation of erbium rich phases. The X-ray diffraction measurements completed by simulation show that the main location of erbium in the AlN wü rtzite is the metal substitution site on the whole range. They also show that octahedral and tetrahedral sites of the wü rtzite do welcome Er ions over the [1.6-6%] range. The XRD deductions allow some interpretations on the theoretical mechanisms of the photoluminescence mechanisms and more specifically on their concentration quenching.

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Section: X-ray Diffraction Investigationsupporting

confidence: 89%

Erbium location into AlN films as probed by spatial resolution experimental techniques

Brien

Boulet

2015

Acta Materialia

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“…This is because both experimental and theoretical studies have found that the RE atom substitution on cation site is the most possible configuration. 16,17 In this work, all calculations are performed with the CASTEP code 18 using the pseudopotential plane-wave scheme based on the density functional theory. …”

Section: Computational Detailsmentioning

confidence: 99%

“…Because experimental and theoretical works have studied the Er related vacancy defect complex, which had shown that only the C 3v symmetry of III-nitride semiconductors is the most possible defect complex in doping. 16 resource, we only focus on the configuration with C 3v symmetry and omit the C 1h in this study. After relaxation, three remaining Er-N bond lengths further expand to 2.203Å with respect to bulk AlN and AlN:Er Al .…”

Section: Crystal Structurementioning

confidence: 99%

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Electronic and optical properties of Er doped in AlN

Wang

et al. 2015

Mod. Phys. Lett. B

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Using density functional theory combined GGA + U method, the structural, electronic and optical properties of rare earth Er substituted Al atom (Er Al ) and its complex with neighboring N vacancy (Er Al -V N ) in wurtzite AlN were investigated, respectively. Calculated results show that both defects induced quite localized Er-4f related defect donor levels in the band gap but had few effects on host electronic structures. Moreover, the calculated complex dielectric functions and other optical constants show that these two defects show clear bulk optical properties, only a small peak near the redshift edge appears for the complex defect. These results show that Er dopant AlN should be a good optical material candidate for optoelectronics application.

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