Optical characterization of chemical beam epitaxy grown Ga0.52In0.48P layers and related microstructures

Resonant Raman scattering inInP/In0.48Ga

“…It reproduces the optical-phonon spectrum of bulk In 0.5 Ga 0.5 P epilayers. 23 For in-plane propagation of the exciting and scattered light ͑other configurations in Fig. 1͒, the spectra change.…”

“…The observed resonant enhancement of Raman scattering by optical and acoustic phonons as well as the corresponding polarization effects are discussed. The spectra are compared with those of bulk In 0.5 Ga 0.5 P. 23,24 Samples were grown by solid-source molecular-beam epitaxy on ͑001͒-oriented GaAs substrates. One specimen ͑sample 1͒ contains a single layer of InP quantum dots symmetrically placed in an In 0.48 Ga 0.52 P matrix, lattice-matched to GaAs, with a total thickness of 0.13 m. Another one ͑sample 2͒ consists of three layers of dots separated by 4 nm of In 0.48 Ga 0.52 P. The average amount of InP in a single QD layer is equivalent to a uniform coverage of 3.0 monolayers ͑ML͒.…”