Optical characterization of symmetric InAs/GaSb superlattices for detection in the 3–5μm spectral region

On the structural characterization of InAs/GaSb type-II superlattices: The effect of interfaces for fixed layer thicknesses

“…Nevertheless, when the spectra for each sample (B-1 to B-5) are compared, very clear red-shift in each feature is observed. It is known that the incorporation of InSb interfaces between InAs-GaSb SL layers shifts the effective bandgap to smaller energies with regard to the abrupt transition between the layers [8,14,20,[26][27][28]. The rate of shift is decreasing from samples B-1 to B-5, which is consistent with the assigned interface thicknesses for each sample (see Fig.…”

Interface analysis of InAs/GaSb superlattice grown by MBE

“…Optical transitions at higher energies are also clearly visible. In addition to the C 1 -VH 1 transition due to absorption between fundamental electron (C 1 ) and heavy-hole (VH 1 ) minibands, we can identify other excitonic absorption peaks corresponding to excited inter-minibands transitions between the lowest electron subband (C 1 ) and light-hole (VL 1 ) and second heavy-hole (VH 2 ) minibands, respectively [17]. All these characteristics on optical absorption spectra confirm that the straincompensation process we use allows us to grow highquality InAs/GaSb SL, even in the case of thick structures with total active zone thickness up to several micrometres.…”

Effect of pressure on electrical properties of short period InAs/GaSb superlattice

“…Further details of the epitaxial growth and SL structural characterizations have been published previously [8]. This kind of structure exhibits room temperature cut-off energy near 220 meV (5.6 µm) [9].…”