“…Therefore, a numerical analysis on J sc of a Ga x In 1Àx As 1Ày Sb y -based TPV diode is presented in this paper. For a TPV system with a fixed radiator temperature, F(k) is determined by the performances of the spectral control system [5,7]. The internal spectral response (SR Int (k)), therefore J sc , is affected by the TPV diode parameters such as the absorption coefficient (a), minority carrier mobility and recombination lifetime, surface or interface recombination velocities (S) and thickness (d) of the absorption layer and the reflectance of back surface reflector (BSR).…”