Optical Control of GaAs MESFET's

Salles, Álvaro Augusto Almeida de

doi:10.1109/tmtt.1983.1131611

Cited by 177 publications

(45 citation statements)

References 11 publications

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“…Various control functions such as amplifier gain, phase shifting, oscillator tuning and injection locking can be achieved by using OPFET devices. Experimental findings show that the microwave characteristics of a GaAs MESFET can be controlled by incident light radiation having photon energy greater than or equal to the bandgap energy of GaAs in the same manner as varying the gate bias [8][9][10][11][12]. In comparison with avalanche photo diodes (APDs), OPFET devices show superior performance for dispersion measurement on optical fibers with low dispersion and very high speed [13].…”

Section: Introductionmentioning

confidence: 99%

Optically Controlled Silicon MESFET Fabrication and Characterizations for Optical Modulator/Demodulator

Chattopadhyay¹,

Overton²,

Vetter³

et al. 2010

JSTS:Journal of Semiconductor Technology and Science

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Abstract-An optically controlled silicon MESFET (OPFET) was fabricated by diffusion process to enhance the quantum efficiency, which is the most important optoelectronic device performance usually affected by ion implantation process due to large number of process induced defects. The desired impurity distribution profile and the junction depth were obtained solely with diffusion, and etching processes monitored by atomic force microscope, spreading resistance profiling and C-V measurements. With this approach fabrication induced defects are reduced, leading to significantly improved performance. The fabricated OPFET devices showed proper I-V characteristics with desired pinch-off voltage and threshold voltage for normally-on devices. The peak photoresponsivity was obtained at 620 nm wavelength and the extracted external quantum efficiency from the photoresponse plot was found to be approximately 87.9%. This result is evidence of enhancement of device quantum efficiency fabricated by the diffusion process. It also supports the fact that the diffusion process is an extremely suitable process for fabrication of high performance optoelectronic devices. The maximum gain of OPFET at optical modulated signal was obtained at the frequency of 1 MHz with rise time and fall time approximately of 480 nS. The extracted transconductance shows the possible potential of device speed performance improvements for shorter gate length. The results support the use of a diffusion process for fabrication of high performance optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Optically Controlled Silicon MESFET Fabrication and Characterizations for Optical Modulator/Demodulator

Chattopadhyay¹,

Overton²,

Vetter³

et al. 2010

JSTS:Journal of Semiconductor Technology and Science

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show abstract

“…On the other hand, research on optical modulation and control of other conventional electrical devices like MOSFET [11,12], MESFET [13][14][15], or HEMT [16] have primarily concentrated on microwave systems, low-power signal detection, and optical communication applications which have different requirements from power semiconductor devices and associated power electronics applications. The common feature of these works is that optical signal was applied to modulate steady-state properties such as I-V characteristic [11,12,14], RC time constant [15], RF s-parameters [13], or pinch-off voltage [16] which are very important from the corresponding application area point of view but do not cover the direct modulation aspects of switching properties like rise and fall time, which are important in power electronics applications. Moreover, modulations are reported mainly with respect to the power of the optical signal and not on optical wavelength.…”

Section: Investigation Of the Effect Of Optical Intensity Modulationmentioning

confidence: 99%

Optically-gated Non-latched High Gain Power Device

Mazumder¹

2008

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“…a silicon bipolar transistor [ 1], is illuminated by a modulated light source. The direct optical injection locking has been subject of many investigations with different kinds of devices as IMPATI [2], MESFET [3][4], MODFET [5][6][7], and recently HBT [8]. However, the direct method suffers from a low sensitivity of the ' optical detector'.…”

Section: Introductionmentioning

confidence: 99%

Indirect Optically Controlled Pseudomorphic HEMT Based MMIC Oscillator

Bangert

Benz

Berroth

et al. 1992

1992 22nd European Microwave Conference

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For the first time an indirect optically controlled monolithic integrated oscillator was fabricated and examined experimentally. The oscillator was designed for a frequency of about 7 GHz. By illuminating a 60x60~2 photodiode by the light of a pigtailed laser diode (A-=840 run), the free-running frequency of the oscillator was tunable in a range of more than 7 MHz. A locking range of more than 3 MHz was achieved. A phase shift in the output signal of nearly 180° has been observed.

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Optical Control of GaAs MESFET's

Cited by 177 publications

References 11 publications

Optically Controlled Silicon MESFET Fabrication and Characterizations for Optical Modulator/Demodulator

Optically Controlled Silicon MESFET Fabrication and Characterizations for Optical Modulator/Demodulator

Optically-gated Non-latched High Gain Power Device

Indirect Optically Controlled Pseudomorphic HEMT Based MMIC Oscillator

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