Optical-controlled domain wall resistance in magnetic nanojunctions

Magnetoresistance of non-180° domain wall in the presence of electron-photon interaction

“…Therefore, increasing the photon wavelength which decreases the effect of the Zeeman interaction leads to DWR reduction. The similar DWR reduction by decreasing the external magnetic field [8] and increasing photon wavelength is reported in our previous studies [15] for 180°D Ws. To compare non-180°DWs with 180°DW, the resistance of 30°, 60°, and 180°DWs in the presence of xlinearly polarized photons is also shown in Figure 4.…”

“…We have also shown that the polarization of the photons has significant effect on the DWR [15]. Repeating the calculations for non-180°DW indicates that the electron-photon interaction have no contribution to resistance, and resistance of the nanowire remains invariant in the presence of y-linearly polarized photon.…”

“…As mentioned in our previous works [10,15], the Boltzmann equation with relaxation time approximation can be employed to calculate the spin-dependent relaxation times and, consequently, the other spin transport quantities. The spin-dependent relaxation times, τ σ (k), are as follows [10,15]:…”

“…From both scientific and technological points of view, understanding the resistance caused by DWs and determining the effect of different scattering sources on the DW resistance (DWR) are essential. For that reason, many research efforts have been made to understand the role of DW in resistivity [4][5][6][7][8][9][10][11][12][13][14][15]. Experiments on iron whiskers demonstrate that DWs are a source of electrical resistance [4].…”

“…In recent years, applying an external magnetic field or propagating a photon to control the DWR has been investigated [13][14][15]. It should be mentioned that most of the present studies [4][5][6][7][8][9][10][11][12][13][14][15] have focused on the ideal 180°DWs despite the fact that DWs with a magnetization rotation of less than 180°a ppear in artificial materials [16,17]. Meanwhile, realization of spintronic devices with improved functionality and performance requires controlling DW configurations and understanding their role in electronic transport.…”