Optical determination of Young’s modulus of InAs nanowires

Lexholm, Monica; Karlsson, I; Boxberg, Fredrik; Hessman, Dan

doi:10.1063/1.3225150

Cited by 27 publications

(27 citation statements)

References 19 publications

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“…Experimental nanowire resonance frequencies (black circles) plotted as a function of the geometry factor G and fitted line through origin (solid line), yielding a constant Young's modulus E = (45 ± 3) GPa. The inset shows an enlarged view of the leftmost part of the plot indicated by a black rectangle, clearly demonstrating that the ten most flexible nanowires are equally well-described by the global value of E as their more rigid counterparts exhibiting a larger geometry factor G. Error bars on the G-axis include the uncertainty in determining r, R and h by SEM analysis.A possible explanation for this vast spread could be a dependence of Young's modulus on the geometric dimensions of the underlying nanowires, which is actively discussed in part of the research literature [12][13][14][15][33][34][35][36]. In order to elucidate possible size effects in our data, Young's modulus is additionally determined for each individual nanowire, again using eq.…”

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confidence: 99%

“…A possible explanation for this vast spread could be a dependence of Young's modulus on the geometric dimensions of the underlying nanowires, which is actively discussed in part of the research literature [12][13][14][15][33][34][35][36]. In order to elucidate possible size effects in our data, Young's modulus is additionally determined for each individual nanowire, again using eq.…”

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confidence: 99%

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Size-independent Young's modulus of inverted conical GaAs nanowire resonators

Paulitschke

Seltner

Lebedev

et al. 2013

Applied Physics Letters

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We explore mechanical properties of top down fabricated, singly clamped inverted conical GaAs nanowires. Combining nanowire lengths of 2 − 9 µm with foot diameters of 36 − 935 nm yields fundamental flexural eigenmodes spanning two orders of magnitude from 200 kHz to 42 MHz. We extract a size-independent value of Young's modulus of (45 ± 3) GPa. With foot diameters down to a few tens of nanometers, the investigated nanowires are promising candidates for ultra-flexible and ultra-sensitive nanomechanical devices.PACS numbers: 46.70. Hg,62.20.de,62.23.Hj,62.25.Jk Keywords: Nanomechanical systems, mechanical resonators, nanowires, Young's modulusThe rise of nanotechnologies in basic research as well as the applied sciences goes along with the development of more and more compact and sensitive devices. For example, nanomechanical systems (NEMS) are promising candidates for ultra-responsive mass [1,2], force [3][4][5] or biosensors [6][7][8], as well as accelerometers [9] or oscillators [10]. The successful realization of such devices is enabled by a combination of three key factors: integrated architectures, reliable fabrication and high sensitivity. Particularly for integrated sensing devices the vertical arrangement of dense arrays of micro-or nanowires [5] is considered beneficial. A compact sensor design with higher functionality and reproducible control over device parameters is facilitated by top down fabrication. Finally, the device's sensitivity is closely related to its spring constant, which is a function of both geometry and material properties such as Young's modulus E, as, quite generally, a softer spring allows resolving smaller signals. Thus, detailed knowledge of the mechanical properties is crucial to predict the performance of a device. Typically, Young's moduli are determined by relating the measured resonance frequency f 0 of the resonator's fundamental flexural mode to its geometrical dimensions [11][12][13][14][15][16]. A prominent example is the simple singly-clamped cylindrical beam for which Euler Bernoulli beam theory [17] yields the well-known relationfor aspect ratios r/h < 0.1 with mass density ρ, beam radius r and length h.Here we present a nanomechanical resonator which is an excellent candidate for a nanomechanical sensing device. Figure 1 shows nanowires etched into an (100)-oriented GaAs substrate, combining the benefits of top down fabrication with an ultrasoft mechanical response, allowing for immediate integration into a sensing array. * present address: Universität Konstanz, Universitätsstr. 10, 78457 Konstanz, Germany; eva.weig@uni.konstanz.de Notably, the nanowires are not cylindrical, but of inverted conical shape. This is apparent from the magnified nanowire in the right part of Fig. 1 featuring a length of h = 6 µm, a head radius of R = 264 nm and a foot radius of only r = 85 nm, which corresponds to a taper angle of ϕ ≈ 1.7 • . While the narrow nanowire foots enable high force sensitivities [18,19], the relatively large nanowire heads can easily be resolved in an optical...

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Size-independent Young's modulus of inverted conical GaAs nanowire resonators

Paulitschke

Seltner

Lebedev

et al. 2013

Applied Physics Letters

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“…In contrast to the resonant excitation of nanowire oscillations that may be induced by an electrical or magnetic ac signal, the amplitude of these self-excited stationary vibrations is not limited by any resonant condition and, as a result, they can be large. In a realistic experimental situation with a CNT resonator of length L ∼ 1 µm, vibration frequency ω ∼ 2π × 200 MHz, and quality factor Q ∼ 10 4 carrying a characteristic current J 0 ∼ 1 nA, the vibration amplitude is A st ∼ 10 nm at T ∼ 0.1 K in a magnetic field of ∼ 10 T. In principle, oscillations with such an amplitude could be directly monitored by clever imaging techniques [18]. We have also demonstrated that the onset and disappearance of these mechanical vibrations are manifest in a pronounced hysteretic behavior of the averaged electrical current through the structure.…”

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Spin-Controlled Nanomechanics Induced by Single-Electron Tunneling

et al. 2011

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We consider dc-electronic transport through a nanowire suspended between normal- and spin-polarized metal leads in the presence of an external magnetic field. We show that magnetomotive coupling between the electrical current through the nanowire and vibrations of the wire may result in self-excitation of mechanical vibrations. The self-excitation mechanism is based on correlations between the occupancy of the quantized electronic energy levels inside the nanowire and the velocity of the nanowire. We derive conditions for the occurrence of the instability and find stable regimes of mechanical oscillations.

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“…[3][4][5][6][7][8][9][10] Semiconducting nanostructures also exhibit interesting mechanical properties when their lateral dimension are scaled below 100 nm. 11 Because of the competition between atomic coordination and electronic distribution, surfaces can be softer or harder than the bulk. 12 As a consequence, mechanical properties like Young's modulus can be increased 13 or decreased 14 compared with those of bulk crystals by decreasing the nanowire cross section down to the nanoscale.…”

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An open-source platform to study uniaxial stress effects on nanoscale devices

Signorello

Schraff

Zellekens

et al. 2017

Review of Scientific Instruments

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We present an automatic measurement platform that enables the characterization of nanodevices by electrical transport and optical spectroscopy as a function of uniaxial stress. We provide insights into and detailed descriptions of the mechanical device, the substrate design and fabrication, and the instrument control software, which is provided under open-source license. The capability of the platform is demonstrated by characterizing the piezo-resistance of an InAs nanowire device using a combination of electrical transport and Raman spectroscopy. The advantages of this measurement platform are highlighted by comparison with state-of-the-art piezo-resistance measurements in InAs nanowires. We envision that the systematic application of this methodology will provide new insights into the physics of nanoscale devices and novel materials for electronics, and thus contribute to the assessment of the potential of strain as a technology booster for nanoscale electronics.2

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Optical determination of Young’s modulus of InAs nanowires

Cited by 27 publications

References 19 publications

Size-independent Young's modulus of inverted conical GaAs nanowire resonators

Size-independent Young's modulus of inverted conical GaAs nanowire resonators

Spin-Controlled Nanomechanics Induced by Single-Electron Tunneling

An open-source platform to study uniaxial stress effects on nanoscale devices

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