Optical Dispersion by Wannier Excitons

Tanguy, Christian

doi:10.1103/physrevlett.75.4090

Cited by 143 publications

(85 citation statements)

References 16 publications

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“…For Wannier-type excitons, Tanguy developed model functions for parabolic bands taking into account bound and unbound states [31,33,48]. These functions, strictly valid for parabolic bands and isotropic materials only, were used by Sturm et al [8] for analysis of GSE data from β-Ga 2 O 3 .…”

Section: Excitonic Contributions At Fundamental Band-to-band Transitionsmentioning

confidence: 99%

“…These functions, strictly valid for parabolic bands and isotropic materials only, were used by Sturm et al [8] for analysis of GSE data from β-Ga 2 O 3 . In their work, Sturm et al did not determine the exciton binding energy parameter from using the Tanguy model [31,33,48] approach. In our present work, and because the dominant contribution to exciton absorption processes in direct band-gap semiconductors is the ground-state (n = 1) transition [11,46], we employ a single Lorentz oscillator with nonsymmetric broadening to account for, and to spectrally locate the ground-state excitonic contribution, thereby further following Adachi's CP composite approach [45]:…”

Section: Excitonic Contributions At Fundamental Band-to-band Transitionsmentioning

confidence: 99%

“…As a result of their investigations, an indirect gap band-to-band transition around 4.43 eV and a direct gap transition around 4.48 eV parallel to the c axis were proposed, without considering excitonic effects. Sturm et al considered contributions from both bound and unbound Wannier-type excitons [31][32][33] and reported the lowest direct gap band-to-band transition at approximately 4.88 eV, polarized within the a-c plane nearly parallel to c. Furthmüller and Bechstedt presented quasiparticle band structures and density of states of β-Ga 2 O 3 obtained from DFT combined with Hedin's GW approximation for single-particle excitations [10]. The lowest transition energy was determined by this approach to be around 5.04 eV, with polarization mainly along the c axis in the monoclinic a-c plane.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic β−Ga2O3

et al. 2017

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We employ an eigenpolarization model including the description of direction dependent excitonic effects for rendering critical point structures within the dielectric function tensor of monoclinic β-Ga 2 O 3 yielding a comprehensive analysis of generalized ellipsometry data obtained from 0.75-9 eV. The eigenpolarization model permits complete description of the dielectric response. We obtain, for single-electron and excitonic band-to-band transitions, anisotropic critical point model parameters including their polarization vectors within the monoclinic lattice. We compare our experimental analysis with results from density functional theory calculations performed using the Gaussian-attenuation-Perdew-Burke-Ernzerhof hybrid density functional. We present and discuss the order of the fundamental direct band-to-band transitions and their polarization selection rules, the electron and hole effective mass parameters for the three lowest band-to-band transitions, and their excitonic contributions. We find that the effective masses for holes are highly anisotropic and correlate with the selection rules for the fundamental band-to-band transitions. The observed transitions are polarized close to the direction of the lowest hole effective mass for the valence band participating in the transition.

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Section: Excitonic Contributions At Fundamental Band-to-band Transitionsmentioning

confidence: 99%

Section: Excitonic Contributions At Fundamental Band-to-band Transitionsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic β−Ga2O3

et al. 2017

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“…In [12] the polariton propagation was studied for such a sample without pumped carriers (non-excited sample). Based on a theoretical model for the description of polariton propagation the experimental data could be well reproduced with a broadened Elliot formula [18] for the dielectric susceptibilities of the hhand lh-excitons. The results of these calculations are given in Fig.…”

Section: Figurementioning

confidence: 91%

Mott transition of excitons in ZnSe studied by phase resolved reflection

Manzke

Henneberger

Seemann

et al. 2009

Phys. Status Solidi (c)

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The Mott transition of excitons in a semiconductor with increasing carrier density is in principle well understood as a consequence of screening of the Coulomb interaction between carriers. While the position of the exciton stays widely unchanged the exciton peak disappears due to band gap shrinkage. However, a more quantitative check of applied theoretical models for the screening and of the role of quantum kinetic effects in this process is still open.We demonstrate that the phase‐resolved reflection in shallow‐confined ZnSSe heterostructures opens the possibility of a detailed study of the Mott transition due to the appearance of pronounced interferences effects of propagating polariton modes.Our theoretical approach for the investigation of the influence of excited carriers on the dielectric susceptibility is based (i) on a quasi‐particle approximation for the carrier energies and damping, and (ii) on the semiconductor Bloch equations including dynamical screening and a quantum kinetic treatment of scattering. These manybody effects lead to drastic changes of both amplitude and phase of the reflected light: Jumps of the phase are steepened, show abrupt changes from +π to –π and are smoothed out, and interference peaks in the amplitude decrease and disappear completely with increasing excitation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…An improved model based on calculations of spectral moments was shown to describe the Faraday rotation of CdMnTe with a better accuracy [17]. The best currently available description of the refractive index due to interband transitions is due to Tanguy [18]. His models can certainly provide a precise description of interband Faraday rotation.…”

Section: Low-temperature Magnetizationmentioning

confidence: 99%

Semimagnetic Semiconductors

Gaj

1999

Acta Phys. Pol. A

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This paper contains a description and explanation of selected basic phenomena characteristic of bulk semimagnetic semiconductors: giant Faraday rotation and giant Zeeman splitting, mean field approximation and its limitations, ion-ion interaction, its measurements and its influence on magnetic properties, etc. The basic part is followed by a discussion of a personal choice of new perspectives open by the introduction of diluted magnetic semiconductors in semiconductor quantum structures. In particular, the role of magnetic ions in characterization of semiconductor quantum structures and • low-dimensional excitonic systems is analyzed. Particular attention is paid to magnetooptical phenomena and magnetooptical experimental methods in large gap II-VI semimagnetic semiconductors.

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Optical Dispersion by Wannier Excitons

Cited by 143 publications

References 16 publications

Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic β−Ga2O3

Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic β−Ga2O3

Mott transition of excitons in ZnSe studied by phase resolved reflection

Semimagnetic Semiconductors

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