Optical, electrical, and chemical characterization of nanostructured InxGa1-xN formed by high fluence In+ ion implantation into GaN

Hernández-Gutiérrez, C.A.; Kudriavtsev, Yuriy; Cardona, Dagoberto; Garrido-Hernández, Aristeo; Camas-Anzueto, J.L.

doi:10.1016/j.optmat.2020.110541

Cited by 14 publications

(12 citation statements)

References 37 publications

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“…Finally, n and p electrodes are deposited by utilizing the beam evaporation technique. [47,48] The chip size of conventional LEDs (for traditional solid-state lighting) is of the order of hundred microns to a few millimeters. The fabrication processes of micro-LEDs are the same as mentioned above for conventional LEDs, except for the smaller size of an LED mesa.…”

Section: Epitaxial Growth and Chip Processing Of Ledsmentioning

confidence: 99%

Recent Progress in Micro‐LED‐Based Display Technologies

Sajjad

Johar

Hernández-Gutiérrez

et al. 2022

Laser & Photonics Reviews

161

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The demand for high-performance displays is continuously increasing because of their wide range of applications in smart devices (smartphones/watches), augmented reality, virtual reality, and naked eye 3D projection. High-resolution, transparent, and flexible displays are the main types of display to be used in future. In the above scenario, the micro-LEDs (light-emitting diodes) display which has outstanding features, such as low power consumption, wider color gamut, longer lifetime, and short response-time, can replace traditional liquid crystal displays and organic LEDs-based display technologies. However, to attain a remarkable position in future display technology, the micro-LEDs need to overcome problems associated with mass transfer and its high cost of manufacturing. Besides micro-LEDs, the other option for future displays includes the usage of color conversion medium (phosphor/ quantum dots) to convert some of the blue light into other colors. In this review, the various mass transfer display technologies and color conversion strategies which are being used for the realization of a full-color display are discussed.

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Section: Epitaxial Growth and Chip Processing Of Ledsmentioning

confidence: 99%

Recent Progress in Micro‐LED‐Based Display Technologies

Sajjad

Johar

Hernández-Gutiérrez

et al. 2022

Laser & Photonics Reviews

161

View full text Add to dashboard Cite

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“…GaN has a wide application and is not only limited to power electronics. Due to GaNs ability to conduct electrons more efficiently than silicon, GaN is also used in radio, light-emitting diode [24][25][26], in HEMTs [27], laser photodiode detectors [28], and radiation detectors [29].…”

Section: Problem With Using Gan As a Secondary Rectifiermentioning

confidence: 99%

High Step-Up Flyback with Low-Overshoot Voltage Stress on Secondary GaN Rectifier

et al. 2022

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This paper presents a new technique to mitigate the high voltage stress on the secondary gallium nitride (GaN) transistor in a high step-up flyback application. GaN devices provide a means of achieving high efficiency at hundreds (and thousands) of kHz of switching frequency. Presently however, commercially available GaN is limited to only a 650 V absolute voltage rating. Such a limitation is challenging in high step-up flyback applications due to the secondary leakage. The leakage imposes high voltage stress on the secondary GaN rectifier during its turn-off transient. Such stress may cause irreversible damage to the GaN device. A new method of leakage bypass is presented to mitigate the high voltage stress issue. The experimental results suggest that when compared to conventional secondary active clamp, a 2.3-fold reduction in overshoot voltage stress percentage is achievable with the technique. As a result, it is possible to utilize GaN as the rectifier while keeping the peak voltage stress within the 650 V limitation with the technique.

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“…4(a), the I-V curves of the detector under no illumination are nonlinear, which indicates that Schottky contact exists between graphene and nanowires. 28 In addition, the dark current of the detector is about 44 mA at À3 V with an area of $0.46 mm 2 . The spectral responsivity of the detector is dened as the photocurrent output under the action of the unit incident radiation power.…”

Section: Performance and Analysis Of Photodetectormentioning

confidence: 99%