Optical emission spectroscopy as the monitoring tool in ECR-MBE growth of GaN

Optical emission spectroscopy during InN growth by ECR–MBE

“…In this experiment, the temperatures of the substrate and the In cell were fixed at 500 and 850 1C, respectively, and the flow rate of nitrogen gas was kept constant at 30 sccm. It was found that as the positive bias increased, the emission intensity of In à decreased, which was consistent with the result for GaN growth [7]. Therefore, this result is similarly explained by the effect of the positive bias applied to the substrate on In desorption.…”

“…It is also considered, from the above discussion, that V/III ratio was decreased by applying the positive bias. This effect was actually observed for growth of GaN in our previous study [7].…”

“…Optical emission spectroscopy (OES) is very useful as an in situ monitoring tool in plasma-assisted MBE. Chiba et al reported observations of emission from excited gallium (Ga à ) by OES during GaN growth by electron-cyclotron-resonance plasma-excited MBE (ECR-MBE) [7]. It was demonstrated that the desorption of Ga during GaN growth was successfully characterized by monitoring Ga à emission intensity using OES.…”

Microstructures of Cubic and Hexagonal GaN Grown on (0001) Sapphire by ECR-MBE with Various Electric Biases

“…Details of this analysis were discussed in Refs. [12,13]. Figure 1a shows a typical diffraction pattern (DP) along 11 " 20] zone axis from the GaN layer grown with a bias of +20 V. As illustrated in Fig.…”

Preferential Growth Mode of Cubic GaN by Metalorganic Molecular Beam Epitaxy on Sapphire (0001) Substrates

“…Recently, it has been reported that c-GaN(111) could be grown on a closed-packed plane such as GaAs(111) and sapphire (0001) by metalorganic vapor phase epitaxy (MOVPE) [5,6] or molecular beam epitaxy (MBE) [7,8] only under a non-equilibrium growth condition, which requires low growth temperature and excess Ga supply. However, the quality of these c-GaN layers is inferior due to the low-temperature growth.…”