Optical emission spectroscopy of Ar–N2 mixture plasma

Qayyum, A.; Zeb, Shaista; Naveed, Muhammad; Rehman, Najeeb Ur; Ghauri, S. A.; Zakaullah, M.

doi:10.1016/j.jqsrt.2007.02.008

Cited by 100 publications

(40 citation statements)

References 26 publications

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“…During ammonia microwave plasma treatment process, the content of various radicals are affected obviously by the input microwave power. When the microwave power is too high, the main radical in NH 3 plasma is ·N or ·N 2 radicals [20] , which is useless to form amine group on the diamond surface [21,22] . To form enough ·NH and/or ·NH 2 radicals, it is necessary to optimize the input microwave power.…”

Section: Modification Mechanismmentioning

confidence: 99%

Amination of diamond film by ammonia microwave plasma treatment

Wei

Liu

Chen

et al. 2015

Diamond and Related Materials

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Section: Modification Mechanismmentioning

confidence: 99%

Amination of diamond film by ammonia microwave plasma treatment

Wei

Liu

Chen

et al. 2015

Diamond and Related Materials

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“…Therefore, if argon is added to the nitrogen plasma, the emission intensities are significantly increased, and consequently the concentration of the active species can be observed. This is expected based on the Penning effect, as follows [4]:…”

Section: Methodsmentioning

confidence: 78%

Temperature measurements in a manufactured RF plasma jet in various Ar/N$_{2}$ mixtures

Ravari¹,

Ganjovi²,

Shojaei³

et al. 2017

Turk J Phys

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In this paper, using the optical emission spectroscopy technique, a comparative study is performed on the argon excitation and nitrogen vibrational temperatures in the plasma discharge medium of a manufactured RF plasma jet. The argon contribution in the Ar/N 2 mixture is varied from 70% to 98% and the obtained optical emission spectra from argon and molecular nitrogen are analyzed. The highest emission intensities of neutral argon (Ar I) are recorded in the wavelength range of 790-850 nm. It is seen that, at the higher argon percentages in the mixture, the emission intensity from all the formed species in the plasma discharge medium of the RF plasma jet will increase. In addition, at the lower Ar contributions in the mixture, both the argon excitation and nitrogen vibrational temperatures are higher. Furthermore, it is shown that, at the higher Ar percentages in the mixture, both of the electronic temperatures are decreased.

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“…29 The N * 2 emission lines mainly consisted of the radiative state (C 3 Q u / B 3 Q g ) and the metastable state (B 3 Q u + / A 3 P u + ). 29 The N * 2 emission lines mainly consisted of the radiative state (C 3 Q u / B 3 Q g ) and the metastable state (B 3 Q u + / A 3 P u + ).…”

Section: Resultsmentioning

confidence: 97%

Improvement of the Ar/N₂ binary plasma-treated carbon passivation layer deposited on Li₄Ti₅O₁₂ electrodes for stable high-rate lithium ion batteries

Lan

Chang

et al. 2015

RSC Adv.

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In this study, nanoscale carbon overlayers, with and without nitrogen doping, have been investigated as surface passivation layers to enhance the rate capability and cycling stability of Li 4 Ti 5 O 12 (LTO). As indicated by optical emission spectroscopy, Raman spectra and high resolution X-ray photoelectron spectroscopy analysis, nitrogen successfully dopes into the carbon overlayer by Ar/N 2 binary plasma irradiation, owing to the interaction between the carbon overlayer and chemically reactive plasma species such as N 2 + and N. In addition, the results of SEM and XPS depth profiles also prove that the Ndoped carbon overlayer can effectively suppress the formation of a resistive solid-electrolyte-interface (SEI) film. The electrochemical test results demonstrate that the LTO coated with N-doped carbon overlayer (NC-overlayer/LTO) exhibits superior capacity (133 mA h g À1 ) and excellent stability with 91% capacity retention over 300 cycles at a high C rate (10C). The excellent electrochemical performance of NC-overlayer/LTO can be attributed to the N-doped carbon passivation layer that effectively facilitates Li + ion diffusion and reduces internal resistance.

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Optical emission spectroscopy of Ar–N2 mixture plasma

Cited by 100 publications

References 26 publications

Amination of diamond film by ammonia microwave plasma treatment

Amination of diamond film by ammonia microwave plasma treatment

Temperature measurements in a manufactured RF plasma jet in various Ar/N$_{2}$ mixtures

Improvement of the Ar/N₂ binary plasma-treated carbon passivation layer deposited on Li₄Ti₅O₁₂ electrodes for stable high-rate lithium ion batteries

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Optical emission spectroscopy of Ar–N2 mixture plasma

Cited by 100 publications

References 26 publications

Amination of diamond film by ammonia microwave plasma treatment

Amination of diamond film by ammonia microwave plasma treatment

Temperature measurements in a manufactured RF plasma jet in various Ar/N$_{2}$ mixtures

Improvement of the Ar/N2 binary plasma-treated carbon passivation layer deposited on Li4Ti5O12 electrodes for stable high-rate lithium ion batteries

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Product

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About

Improvement of the Ar/N₂ binary plasma-treated carbon passivation layer deposited on Li₄Ti₅O₁₂ electrodes for stable high-rate lithium ion batteries