Optical extraction enhancement of an 860 nm GaAs based vertical-cavity surface emitting laser with a double textured structure

Abstract

The use of a double textured structure for improving the light extraction efficiency of an 860 nm GaAs vertical-cavity surface emitting laser (VCSEL) is investigated. The textured structure was formed on both surface of a GaP top layer and the surface of a SiN film used as an anti-reflection film. The measurement of the emission spectrum indicated that the light extraction efficiency of a VCSEL was increased by using it as a textured top surface as well as an anti-reflection film either without or with a textured surface. Significant increases in the light extraction efficiency were observed in the VCSEL with both a textured top structure and textured anti-reflection structure. The optical properties of VCSEL chips were used to obtain the highest output power of 127 mW with a double textured structure, which exhibits a relative increase of approximately 73% when compared to that of a conventional VSCEL (75 mW).

Improved optical efficiency of GaAs-based infrared vertical-cavity surface-emitting laser enabled by combining a metallic reflector and a Bragg reflector

“…Photons emitted upward from the VCSEL were effectively extracted out of the top surface through Si 3 N 4 used as an antireflection layer. 30 To make the light-emitting pole and oxide aperture region, top n-DBRs with ring-metal in the 860 nm VCSEL were etched by the inductively coupled plasma (ICP) system introduced with Ar and BCl Al 0.98 Ga 0.02 As layer near the bottom region of the n-DBR is changed to a thin Al 2 O 3 layer (oxide aperture) by thermal oxidation reaction. The emission area and light-emitting pole have 10 and 30 μm diameters, respectively.…”

GaN-based vertical cavity surface emitting lasers with lateral optical confinements and conducting distributed Bragg reflectors

“…Vertical cavity surface emitting lasers (VCSELs) have various advantages, such as a formation of a two-dimensional array, a low power consumption, and a high-speed modulation. [1][2][3][4][5] GaAs-based infrared VCSELs have shown the first room-temperature continuous-wave (RT CW) operation in 1988. 6) Since then tremendous efforts have been paid to improve the GaAs-based VCSEL performances, showing more than 50% wall plug efficiency.…”

“…The epitaxial wafers of the two VCSELs were grown on GaN (0001) substrates by metalorganic vapor phase epitaxy at almost the same period. After the growth of the DBRs, a 450 nm n-GaN layer (Si: 1 × 10 19 cm −3 ), 3…”

High-quality n-type conductive Si-doped AlInN/GaN DBRs with hydrogen cleaning

“…Compared to edge-emitting lasers emitting light horizontally to substrates, VCSELs have the advantages of small size, low power consumption, and easy fabrication of two-dimensional arrays. [1][2][3][4][5] GaAs-based and GaInP-based VCSELs for near-infrared and red wavelengths are already utilized in optical communication networks, laser printers, and facial recognition systems. On the other hand, GaNbased VCSELs for blue and green wavelengths are under development for applications for compact and lightweight mobile displays, adaptive headlights with controllable illumination ranges, and so on.…”