Optical Field-Induced Mass Transport in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>As</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi>S</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Chalcogenide Glasses

Saliminia, A.; Galstian, Tigran; Villeneuve, A.

doi:10.1103/physrevlett.85.4112

Cited by 127 publications

(111 citation statements)

References 20 publications

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“…direct light-induced fabrication of surface relief (SR) by lateral mass transport on ChG films, have been widely studied for several selected composition, including As 0.4 S 0.6 , As 0.2 Se 0.8 , Se [9][10][11][12] and appropriate mechanisms were proposed recently [13,14]. More detailed study reveals the influence of chalcogen content on this process.…”

Section: Aq1mentioning

confidence: 99%

Electron beam-induced mass transport in As–Se thin films: compositional dependence and glass network topological effects

Trunov

Cserháti

Lytvyn

et al. 2013

J. Phys. D: Appl. Phys.

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Electron beam (e-beam)-induced changes of surface profile morphology in As c Se 1−c (0.2 < c < 0.5) thin films are investigated as a function of the film composition. It is shown that the extent and value of local surface alterations follow the composition-related changes of glass parameters such as softening temperature and glass network connectivity. The giant e-beam-induced surface relief changes detected in the films As 0.2 Se 0.8 are connected with lateral mass transport, which increases drastically near rigidity transition, i.e. at a coordination number r ∼ 2.2 of the glass structures when the rigidity starts to percolate through the structure. The model of the process, which reflects the compositional dependence of the stimulated mass transport, is presented.

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Section: Aq1mentioning

confidence: 99%

Electron beam-induced mass transport in As–Se thin films: compositional dependence and glass network topological effects

Trunov

Cserháti

Lytvyn

et al. 2013

J. Phys. D: Appl. Phys.

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“…25,28 Figure 2 shows light-intensity dependence of the peakto-valley height h in anisotropic deformations in As 2 S 3 and Se. Naturally, h tends to increase with the absorbed dose ␣It, 16,25 which is proportional to the absorbed photon number, where ␣ is the absorption coefficient, I is the incident light irradiance, and t is the exposure time. Accordingly, in the figure, the light-intensity dependence is compared under fixed absorbed doses.…”

Section: A Anisotropic Deformationmentioning

confidence: 99%

“…In the previous studies, 16,22,23,25 As 2 S 3 films were deposited onto microscope slides, which were exposed to focused linearly polarized laser beams. It was demonstrated that an isotropic expansion appears at first, which gradually transforms to an anisotropic M-shaped deformation with exposure time.…”

Section: A Anisotropic Deformationmentioning

confidence: 99%

“…Recently, Krecmer et al 15 and Saliminia et al 16 have discovered two vectoral phenomena which produce macroscopic deformations. One is an optomechanical ͑OM͒ effect, 15,[17][18][19][20] which is a polarization-dependent deflection of small bilayer cantilevers consisting of As-S-Se and Si ͑or Si 3 N 4 ͒.…”

Section: Introductionmentioning

confidence: 99%

“…21 The other is a photoinduced anisotropic M-shaped deformation in As 2 S 3 films. 16,22,23 Both of these phenomena are induced by illumination of linearly polarized band gap light. On the other hand, the OM effect appears only during illumination, i.e., it is transitory, while the anisotropic deformation exists in quasistable after illumination.…”

Section: Introductionmentioning

confidence: 99%

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Polarization-dependent photoinduced mechanical deformations in covalent chalcogenide glasses

Asao¹,

Tanaka²

2007

Journal of Applied Physics

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The optomechanical effect and photoinduced anisotropic deformation induced by illumination of linearly polarized light have been comparatively studied for glassy As 2 S 3 and Se films. The two materials show qualitatively the same behaviors in the mechanical effect and the deformation, which suggests that these photoinduced phenomena are inherent to the covalent chalcogenide glass. But, the two phenomena show different dependences upon intensity, spectrum and exposure time of excitation light, which imply different underlying mechanisms.

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Engineering Glassy Chalcogenide Materials for Integrated Optics Applications

Richardson¹,

Cardinal

Richardson

et al. 2003

Photo‐Induced Metastability in Amorphous Semiconductors

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Next generation devices for telecommunication and related applications will rely on the development of materials which possess optimized physical properties that are compatible with packaging requirements for systems in planar or fiber form. This allows suitable "integration" to existing fiber-based applications and hence requires appropriate consideration to material choice, its stability and long-term aging behavior. Included within this chapter are results of recent efforts to engineer materials suitable for such integration. First, needs for integrated optics and the attractiveness of chalcogenide-based glasses (ChGs) are reviewed. Second, the flexibility offered within the As-S-Se glass system is discussed, and comparisons are drawn between glasses in bulk and film forms. Following a description of the chemical systems and the properties evaluated on materials in bulk glass and film form, results of efforts to create components and characterize key structural attributes of such elements are described. The property differences and characterization tools employed to realize these data are presented. Efforts have been made in these studies to process and characterize the resulting structures in the form to be used in their final device geometry. Lastly, the ability to photo-induce changes within these glasses are discussed and key issues of such modification are reviewed. Described are results of efforts to tailor optical properties concurrent with structural stability, and to evaluate changes to these properties which result during photo-modification and subsequent aging. Chalcogenide Glasses for Near-Infrared (NIR) OpticsTwo characteristics of As-S-(Se) compounds -a large glass forming region and a wide optical transmission band, with potentially low loss for the 1.3-1.55 µm telecommunications window -make them excellent candidates for infrared guiding applications. The ability to process these glasses in substantial quantities in their bulk form, and their demonstrated capability of fabricating good optical quality thin films formed by thermal evaporation and other deposition techniques, enables the realization of relatively low cost As-S-(Se) integrated optical components. With appropriate consideration of function and application, such components can be "integrated" onto a single "chip" or substrate.In complementary work to that described elsewhere in this text, we and our collaborators have demonstrated a range of optical functions that can be realized in these glasses, including rare earth (Pr and Er) doping and emission in key telecommunication wavelengths, fabricationPhoto-Induced Metastability in Amorphous Semiconductors. Edited by Alexander V. Kolobov

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Optical Field-Induced Mass Transport inAs2S3Chalcogenide Glasses

Cited by 127 publications

References 20 publications

Electron beam-induced mass transport in As–Se thin films: compositional dependence and glass network topological effects

Electron beam-induced mass transport in As–Se thin films: compositional dependence and glass network topological effects

Polarization-dependent photoinduced mechanical deformations in covalent chalcogenide glasses

Engineering Glassy Chalcogenide Materials for Integrated Optics Applications

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