Optical functions of ion-implanted, laser-annealed heavily doped silicon

Jellison, G. E.; Withrow, S. P.; McCamy, James W.; Budai, J. D.; Lubben, D.; Godbole, M. J.

doi:10.1103/physrevb.52.14607

Cited by 49 publications

(51 citation statements)

References 17 publications

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“…In addition, TEM observations after laser annealing show that the melting depth at a given energy density (visible defect band) is about 40-50 nm smaller in the Si + implant case. This is thought to be due to a difference in the surface reflectivity linked to the absence of boron in the Si implant sample 29 . Moreover, the higher damage density in the Si + implant case may influence the local melt temperature, which in turn may impact the melt depth at a given energy density.…”

Section: Large Loops Lying On (001) Planes With Burgers Vector Parallmentioning

confidence: 99%

Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

Qiu

Cristiano

Huet³

et al. 2014

Nano Lett.

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Damage evolution and dopant distribution during nanosecond laser thermal annealing of ion implanted silicon have been investigated by means of transmission electron microscopy, secondary ion mass spectrometry, and atom probe tomography. Different melting front positions were realized and studied: nonmelt, partial melt, and full melt with respect to the as-implanted dopant profile. In both boron and silicon implanted silicon samples, the most stable form among the observed defects is that of dislocation loops lying close to (001) and with Burgers vector parallel to the [001] direction, instead of conventional {111} dislocation loops or {311} rod-like defects, which are known to be more energetically favorable and are typically observed in ion implanted silicon. The observed results are explained in terms of a possible modification of the defect formation energy induced by the compressive stress developed in the nonmelted regions during laser annealing.

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Section: Large Loops Lying On (001) Planes With Burgers Vector Parallmentioning

confidence: 99%

Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

Qiu

Cristiano

Huet³

et al. 2014

Nano Lett.

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“…The spectra in Fig. (3) resemble those of phosphorus-implanted bulk Si with similar carrier concentrations (20). The optical constants change only a little below the direct gap due to free carrier and heavy doping effects.…”

Section: Discussionmentioning

confidence: 49%

Optical studies of phosphorus-doped poly-Si films

Zollner¹,

Liu²,

Chen³

et al. 1998

The 1998 International Conference on Characterization and Metrology for ULSI Technology

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We have performed a detailed optical study of phosphorus-doped polycrystalline silicon films (prepared by amorphous deposition with in situ doping and annealing by thermal oxidation up to 1000°C) using Raman spectroscopy and variable-angle spectroscopic ellipsometry from 0.7 to 5 eV. We focus on the determination of strain and grain size using optical techniques and compare with results of a structural analysis using plan-view transmission electron microscopy and atomic force microscopy. We analyze the derivatives of our ellipsometry data (peak shifts and broadenings) using analytical lineshapes,which are affected by grain size, film thickness, doping, and inhomogeneity, but only minimally by macroscopic biaxial strain.

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“…These wavelength shifts of ε 1 and ε 2 are a clear signature of the effective doping of the Si NCs and, to our knowledge, are the first observation of a similar effects in Si NCs. Instead, similar shifts were previously observed for the peak of ε 1 and ε 2 of bulk Si when heavily doped by n-type dopants such as P and As followed by pulsed-laser annealing [28]. This red-shift phenomenon in the optical constants of the Si NCs, in the presence of the As and after the laser irradiation process, is a signature of the effective doping of the NCs by As atoms since it is consistent with the introduction of localized states in the NCs bandgap.…”

Section: Resultsmentioning

confidence: 70%

“…In particular, an effective medium approximation simulation analysis has been applied to the ellipsometric data in order to obtain both real (ε 1 ) and imaginary (ε 2 ) parts of the dielectric function [28][29][30].…”

Section: Characterizationsmentioning

confidence: 99%

A Combined Ion Implantation/Nanosecond Laser Irradiation Approach towards Si Nanostructures Doping

Ruffino

Romano

Carria

et al. 2012

Journal of Nanotechnology

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The exploitation of Si nanostructures for electronic and optoelectronic devices depends on their electronic doping. We investigate a methodology for As doping of Si nanostructures taking advantages of ion beam implantation and nanosecond laser irradiation melting dynamics. We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO 2 /Si/SiO 2 multilayer and its spatial redistribution after annealing processes. As accumulation at the Si/SiO 2 interfaces was observed by Rutherford backscattering spectrometry in agreement with a model that assumes a traps distribution in the Si in the first 2-3 nm above the SiO 2 /Si interfaces. A concentration of 10 14 traps/cm 2 has been evaluated. This result opens perspectives for As doping of Si nanoclusters embedded in SiO 2 since a Si nanocluster of radius 1 nm embedded in SiO 2 should trap 13 As atoms at the interface. In order to promote the As incorporation in the nanoclusters for an effective doping, an approach based on ion implantation and nanosecond laser irradiation was investigated. Si nanoclusters were produced in SiO 2 layer. After As ion implantation and nanosecond laser irradiation, spectroscopic ellipsometry measurements show nanoclusters optical properties consistent with their effective doping.

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Optical functions of ion-implanted, laser-annealed heavily doped silicon

Cited by 49 publications

References 17 publications

Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

Optical studies of phosphorus-doped poly-Si films

A Combined Ion Implantation/Nanosecond Laser Irradiation Approach towards Si Nanostructures Doping

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