Optical functions of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">BiI</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>as measured by generalized ellipsometry

Jellison, G. E.; Ramey, J. O.; Boatner, L. A.

doi:10.1103/physrevb.59.9718

Cited by 48 publications

(34 citation statements)

References 15 publications

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“…Generalized Ellipsometry (GE), originally introduced by Azzam and Bashara [9], emerged recently as a new global approach for characterization of the optical and structural properties of general anisotropic layered materials, and can be applied for wavelengths from the far infrared to the deep ultra violet [6]. This technique, which provides normalized Jones reflection or transmission matrix elements [10], is very feasible for studying structural and dielectric properties of birefringent media [7,[11][12][13][14][15][16][17][18][19][20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Ellipsometry on Anisotropic Materials: Bragg Conditions and Phonons in Dielectric Helical Thin Films

Schubert

Herzinger

2001

phys. stat. sol. (a)

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This contribution presents 4 Â 4 matrices for generalized ellipsometry analysis of dielectric helical thin films within the algebraic framework for arbitrary anisotropic layered samples. Liquid crystal and solid-state material optical properties are used to demonstrate dielectric helical thin film examples, at visible and infrared wavelengths, respectively. A new optical resonance band, located between the A 1 and E 1 TO mode, is observed for an a-plane wurtzite film when the c-axis is twisted along the growth direction. The solution given here will open up new avenues for precise ellipsometry characterization of rotationally inhomogeneous media with symmetric dielectric tensor properties such as chiral liquid crystals, sculptured thin films, or helically arranged organic materials.

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Section: Introductionmentioning

confidence: 99%

Ellipsometry on Anisotropic Materials: Bragg Conditions and Phonons in Dielectric Helical Thin Films

Schubert

Herzinger

2001

phys. stat. sol. (a)

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“…Weak interlayer coupling can cause defect formation and material damage during material handling and device fabrication. 1,3,4,8,17 Among these layered iodides, InI stands out as having a strong inter-layer bonding. InI has a base centered orthorhombic crystal structure 18 having layers stacked along the b-direction as shown in Fig.…”

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First principles study of native defects in InI

Biswas

2011

Journal of Applied Physics

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Heavy-metal halide semiconductors have attracted much interest recently for their potential applications in radiation detection because the large atomic numbers (high Z) of their constituent elements enable efficient radiation absorption and their large band gaps allow room temperature operation. However, defect properties of these halides and their connection to carrier transport are little known. In this paper, we present first-principles calculations on native defects in InI, which is a promising material for applications in room temperature radiation detection. The important findings are: (1) anion and cation vacancies (Schottky defects) form the dominant low-energy defects that can pin the Fermi level close to midgap, leading to high resistivity that is required for a good radiation detector material; (2) the anion vacancy in InI induces a deep electron trap, which should reduce electron mobility-lifetime product in InI; (3) low diffusion barriers of vacancies could be responsible for the observed polarization phenomenon at room temperature.

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“…1.8 eV, see Figure 1a) can be interpreted as a direct transition, while at lower temperature the lowest energy transition has been attributed to an indirect transition. 14,15,19 More recently, the transition at room temperature has been assigned to an indirect gap by optical absorption spectroscopy. 20 Density functional theory (DFT) has been previously used to elucidate the electronic band structure of BiI 3 and confirm the indirect nature of the transition, 20,21 but only few recent studies 5,[20][21][22] apply spin orbit coupling, a) Electronic mail: alehner@mrl.ucsb.edu which is necessary in 6s systems.…”

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“…Optical properties of BiI 3 have been extensively investigated. [14][15][16][17][18][19] The band gap (E g ) values reported for BiI 3 span a large range and the nature of the transition has caused some discussion. It has been suggested that the strong absorption at temperatures above 77 K (E g approx.…”

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Electronic structure and photovoltaic application of BiI3

Lehner

Wang

Fabini

et al. 2015

Applied Physics Letters

136

171

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Rapid recent improvement in photovoltaic efficiency in hybrid lead halide perovskite materials has provided the impetus for understanding other, related main-group halide systems. Here, we show that the closely related but less toxic bismuth iodide BiI3 can show promising optoelectronic properties. Layered binary BiI3 is used here as the active layer in planar solar cell architectures (efficiency approximately 0.3%). Experimental and computational studies of absolute band positions of BiI3 are also presented, to help in the rational design of device architectures that would allow efficient charge transfer at the interfaces.

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Optical functions ofBiI3as measured by generalized ellipsometry

Cited by 48 publications

References 15 publications

Ellipsometry on Anisotropic Materials: Bragg Conditions and Phonons in Dielectric Helical Thin Films

Ellipsometry on Anisotropic Materials: Bragg Conditions and Phonons in Dielectric Helical Thin Films

First principles study of native defects in InI

Electronic structure and photovoltaic application of BiI3

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