Optical gain by self-trapped excitons in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">CdI</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>

Cingolani, A.; Ferrara, M.; Lugarà, M.; Avlijas, T.

doi:10.1103/physrevb.30.2229

Cited by 7 publications

(2 citation statements)

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“…The small ratios indicate that these iodides crystallize in a layer-type structure as discussed above. Among these, CdI 2 is the most studied in single crystal form for its structural polytypism and some other applications like photoconductivity [6,7], luminescence [8][9][10] non-silver halide photography by photolysis. The other member, HgI 2 , is also studied to lesser extent than CdI 2 for its bulk properties regarding its utility as a radiation detector.…”

Section: Introductionmentioning

confidence: 99%

Dependence of Optical Band Gap on Residual Stress in Group IIB Iodide (ZnI₂, CdI₂, HgI₂) Films

Tyagi¹,

Mishra

Mehra

et al. 2010

Integrated Ferroelectrics

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Group IIB iodides are layered structured semiconductors and are chosen particularly for studying the residual stress dependence of band gap because of their anisotropy along and across the layers. The development of residual stress with film thickness, substrate temperature, annealing temperature etc. was studied using X-ray diffraction in these films grown by vacuum evaporation. The three compounds show completely different growth and residual stress behaviors. The room temperature optical band gaps of these films were determined by optical absorption measurements. Only ZnI 2 exhibits excitonic absorption at room temperature. The optical band gaps of ZnI 2 and HgI 2 correlate linearly with residual stress while CdI 2 shows nonlinear behavior. The magnitude of band gap variation with residual stress can be interpreted as due to the affected cation-cation, cation-anion and anion-anion bond lengths. The ionicity of these three compounds decreases linearly with their cation-anion radii ratio and the band gap increases with ionicity.

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Section: Introductionmentioning

confidence: 99%

Dependence of Optical Band Gap on Residual Stress in Group IIB Iodide (ZnI₂, CdI₂, HgI₂) Films

Tyagi¹,

Mishra

Mehra

et al. 2010

Integrated Ferroelectrics

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“…According with Ref. [7,8], the lines at 88 cm −1 (BiI 3 ) and 87 cm −1 (AgI) correspond to E g mode while the Raman lines at 115 cm −1 (BiI 3 ), 112 cm −1 (CdI 2 ) and 108 cm −1 (AgI) are assigned to A g mode.…”

Section: N Preda Et Almentioning

confidence: 99%

Intercalation of Layered Metal Iodides with Pyridine Evidenced by Raman Spectroscopy

et al. 2009

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PbI2, BiI3, CdI2 and AgI crystalline samples intercalated with pyridine have been studied by Raman spectroscopy. Comparing the Raman spectra of pristine metal iodides with those of intercalated samples we have shown the coexistence, in the host crystalline lattice, of two adsorbed forms: a physisorbed one, featured by weak forces of van der Waals type and a chemisorbed one, involving stronger forces related to an electrostatic interaction. The physisorbed form is consistent with the molecules inserted into the interlayer spaces while the chemisorbed form is represented by the molecules forming coordination complexes with the crystalline lattice cations. The crucial role in the formation of such complexes is played by the lone pair of nitrogen atom belonging to the molecules.

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Multiphoton excitation and thermal activation in indirect bandgap semiconductors

Miah

2018

Opt Quant Electron

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Optical gain by self-trapped excitons inCdI2

Cited by 7 publications

References 9 publications

Dependence of Optical Band Gap on Residual Stress in Group IIB Iodide (ZnI₂, CdI₂, HgI₂) Films

Dependence of Optical Band Gap on Residual Stress in Group IIB Iodide (ZnI₂, CdI₂, HgI₂) Films

Intercalation of Layered Metal Iodides with Pyridine Evidenced by Raman Spectroscopy

Multiphoton excitation and thermal activation in indirect bandgap semiconductors

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Optical gain by self-trapped excitons inCdI2

Cited by 7 publications

References 9 publications

Dependence of Optical Band Gap on Residual Stress in Group IIB Iodide (ZnI2, CdI2, HgI2) Films

Dependence of Optical Band Gap on Residual Stress in Group IIB Iodide (ZnI2, CdI2, HgI2) Films

Intercalation of Layered Metal Iodides with Pyridine Evidenced by Raman Spectroscopy

Multiphoton excitation and thermal activation in indirect bandgap semiconductors

Contact Info

Product

Resources

About

Dependence of Optical Band Gap on Residual Stress in Group IIB Iodide (ZnI₂, CdI₂, HgI₂) Films

Dependence of Optical Band Gap on Residual Stress in Group IIB Iodide (ZnI₂, CdI₂, HgI₂) Films