Optical gain in (Zn, Cd)Se–Zn(S, Se) quantum wells

Logue, F. P.; Rees, Philippa; Heffernan, J.; Jordan, C.; Donegan, John F.; Hegarty, J.; Hiei, F.; Taniguchi, S.; Hino, T.; Nakano, K.; Ishibashi, Akira

doi:10.1364/josab.15.001295

Cited by 14 publications

(8 citation statements)

References 38 publications

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“…The observation of lasing with a reasonably lowthreshold pump intensity 10 is strong evidence that the transverse mode of the structure has a high-confinement factor as predicted using our modal analysis in Fig. 1.…”

supporting

confidence: 73%

Demonstration of high-brightness-mode propagation in a compound waveguide structure

Patchell

Logue

O’Gorman

et al. 1999

Applied Physics Letters

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We demonstrate the existence of an unusual and useful high-brightness guided mode of a multimode AlGaAs/GaAs heterostructure compound slab waveguide. This mode has a narrow near-field single lobe confined to the low-index regions of the waveguide. This mode was selectively probed by optically exciting quantum wells optimally placed in the waveguide. By pumping in a stripe geometry, lasing is observed above a threshold of 80 kW/cm2 indicating efficient lasing in the highest-order waveguide mode. The near-field emission pattern of the waveguide was imaged to provide a direct measurement of the intensity profile of the higher-order mode.

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supporting

confidence: 73%

Demonstration of high-brightness-mode propagation in a compound waveguide structure

Patchell

Logue

O’Gorman

et al. 1999

Applied Physics Letters

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“…In the case of ZnS, formula eq 1 can be used, , based on the original derived in various ways by authors in refs and , to determine the radius R of a spherical quantum dot given the blue shift of the energy gap (Δ E ) For the reduced mass of the electron/hole pair there is a multitude ,− of experimental and theoretical values, based on the values of bulk ZnS, which has a light electron in the conduction band and a light as well as a heavy hole in the valence band. The onset of the absorption is attributed, first, to the heavy hole effects, and we have implemented the values m e = 0.34 m 0 , m lh = 0.25 m 0 , and m hh = 0.94 m 0 , while for the static dielectric constant of nanoparticle we have implemented a size-dependent expression according to the formula of ref in eq 2, as it is normal to expect that the QD is not really the same structure as the bulk ZnS…”

Section: Resultsmentioning

confidence: 99%

Synthesis and Characterization of ZnS Nanosized Semiconductor Particles within Mesoporous Solids

2006

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ZnS semiconductor quantum dots have been synthesized using a method involving melt exchange reaction inside the pores of MCM-41 and subsequent reaction with H(2)S. The ZnS quantum dots-MCM-41 composite, which has been studied with XRD, EDS, and BET techniques, is shown to have retained within the pores the formed quantum dots, with a size distribution exhibiting a maximum nanoparticle diameter of ca. 1.8 nm. The structure and the sorption properties of the ZnS/MCM-41 composite have been studied by means of X-ray diffraction, Fourier transform infrared spectroscopy, and surface area measurements. All experimental data reveal that all the final composite products, containing up to 9.3 wt % ZnS as verified by EDS analysis, keep the basic structural characteristics of MCM-41 materials, without significant reduction of their active surface areas. The quantum dot optical properties have been studied with UV-vis, photoluminescence, and photoluminescence excitation spectroscopies providing evidence for the low-dimensional character of the ZnS semiconductor particles.

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“…In this paper, we attempt to address these challenges by using a novel combination of gain materials and cavity design to demonstrate room-temperature lasing at two visible colors (red and green) from a single CdSSe alloy nanowire. The wavelength separation of 107 nm between two colors is much larger than the gain spectra bandwidth limitation of typical semiconductor materials. − More importantly, we show that the color of the total laser output can be controlled dynamically between the two fundamental colors by changing the relative pumping strength of the two segments. This allows the laser generation of any color between the two fundamental colors according to the color map of International Commission on Illumination (CIE).…”

mentioning

confidence: 87%

“…The clear threshold is also evidenced by the well-known “S”-shaped curve when the laser intensity is plotted against pumping intensity on log–log scales, as shown in Figure S10 of the Supporting Information. The wavelength separation of the green and red lasing modes is 107 nm, much larger than the gain bandwidth of the typical II–VI semiconductors of a single composition. − Because of the largely separated optical cavities, the wavelength spacing of the two-color lasing is determined only by the composition distribution along the nanowire. More details about the analysis of the average gain spectra for looped and straight cavities can be found in Sections S2 and S3 of Supporting Information.…”

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confidence: 99%

Dynamical Color-Controllable Lasing with Extremely Wide Tuning Range from Red to Green in a Single Alloy Nanowire Using Nanoscale Manipulation

et al. 2013

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Multicolor lasing and dynamic color-tuning in a wide spectrum range are challenging to realize but critically important in many areas of technology and daily life, such as general lighting, display, multicolor detection, and multiband communication. By exploring nanoscale growth and manipulation, we have demonstrated the first active dynamical color control of multicolor lasing, continuously tunable between red and green colors separated by 107 nm in wavelength. This is achieved in a purposely engineered single CdSSe alloy nanowire with composition varied along the wire axis. By looping the wide-gap end of the alloy nanowire through nanoscale manipulation, two largely independent (only weakly coupled) laser cavities are formed respectively for the green and red color modes. Our approach simultaneously overcomes the two fundamental challenges for multicolor lasing in material growth and cavity design. Such multicolor lasing and continuous color tuning in a wide spectral range represents a new paradigm shift and would eventually enable color-by-design and white-color lasers for lighting, illumination, and many other applications.

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Optical gain in (Zn, Cd)Se–Zn(S, Se) quantum wells

Cited by 14 publications

References 38 publications

Demonstration of high-brightness-mode propagation in a compound waveguide structure

Demonstration of high-brightness-mode propagation in a compound waveguide structure

Synthesis and Characterization of ZnS Nanosized Semiconductor Particles within Mesoporous Solids

Dynamical Color-Controllable Lasing with Extremely Wide Tuning Range from Red to Green in a Single Alloy Nanowire Using Nanoscale Manipulation

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