We have studied the quasi-two-dimensional exciton in ZnSe/Zn x Mg 1Ϫx S y Se 1Ϫy ͑xϭ0.85, yϭ0.21͒ single quantum wells ͑SQWs͒ by photoluminescence and photoluminescence excitation spectroscopy. Self-consistent calculations of the peak energies for a series of SQWs give the conduction band discontinuity ⌬E c ϭ0.40⌬E g and the binding energy of the nϭ1 heavy-hole exciton E b ͑hh1͒ϭ22.1 meV for an 8 nm well width. We believe that the binding energy of the nϭ1 heavy-hole exciton is smaller than the LO phonon energy our samples resulting in a very large exciton-phonon interaction strength observed through the broadening of the exciton resonance with temperature.

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Effect of ion induced damage on carrier lifetimes in strained CdZnSe/ZnSe quantum wells

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