Quasi-two-dimensional exciton in ZnSe/ZnMgSSe single quantum well

Miyajima, Takao; Logue, F. P.; Donegan, John F.; Hegarty, J.; Okuyama, Hiroomi; Ishibashi, Akira; Mori, Yusuke

doi:10.1063/1.113127

Cited by 34 publications

(21 citation statements)

References 5 publications

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“…A fraction of about 60% occurs in the valence bands in coincidence with values found for similar samples in the literature. 20,21 The samples are characterized by means of reflection, polarization-dependent PL, and photoluminescence excitation ͑PLE͒ spectroscopy under continuous-wave laser excitation at cryogenic temperatures ͑1.5-2 K͒. For the magnetic-field-dependent measurements the samples were mounted in a 12-T magnet cryostat with the field perpendicular to the QW plane and parallel to the wave vectors of the incident and emitted light ͑Faraday con-figuration͒.…”

Section: Experimental Setup and Resultsmentioning

confidence: 99%

Negatively charged trion in ZnSe single quantum wells with very low electron densities

et al. 2000

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The polarization-and excitation-intensity-dependent photoluminescence of the negatively charged trion is investigated for ZnSe single quantum wells embedded in ternary and quaternary barriers. The measurements were performed in magnetic fields up to 11.8 T perpendicular to the quantum well. The spin-singlet state of the trion is clearly identified. In contrast to GaAs quantum wells, the increase of the trion binding energy through the magnetic field is found to be negligible, which is explained by the relatively small spatial extent of the trionic wave function in wide-band-gap materials. For magnetic fields beyond 7 T a resonance becomes stabilized that is identified as excited trion spin-triplet state because of its anticorrelation with the trion spin-singlet state behavior for increasing excitation energy.

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Section: Experimental Setup and Resultsmentioning

confidence: 99%

Negatively charged trion in ZnSe single quantum wells with very low electron densities

et al. 2000

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“…The band gap discontinuity between the gap of ZnSe E g (ZnSe)=2.82 eV (at T =1.6 K) and the barrier gap is distributed between conduction and valence bands in proportion ∆E C /∆E V =78/22 for ZnSe/(Zn,Be,Mg)Se heterointerface [20]. For the ZnSe/(Zn,Mg)(S,Se) heterosystem, different values can be found in literature varying from 50/50 [21,22] to 10/90 [23]. We chose a 50/50 ratio for our calculation of the structure parameters.…”

Section: Experimentalsmentioning

confidence: 99%

Binding energy of charged excitons in ZnSe-based quantum wells

et al. 2002

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Excitons and charged excitons (trions) are investigated in ZnSe-based quantum well structures with (Zn,Be,Mg)Se and (Zn,Mg)(S,Se) barriers by means of magneto-optical spectroscopy. Binding energies of negatively-(X − ) and positively (X + ) charged excitons are measured as functions of quantum well width, free carrier density and in external magnetic fields up to 47 T. The binding energy of X − shows a strong increase from 1.4 to 8.9 meV with decreasing quantum well width from 190 to 29Å. The binding energies of X + are about 25% smaller than the X − binding energy in the same structures. The magnetic field behavior of X − and X + binding energies differ qualitatively. With growing magnetic field strength, X − increases its binding energy by 35-150%, while for X + it decreases by 25%. Zeeman spin splittings and oscillator strengths of excitons and trions are measured and discussed.

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“…3(b). The calculation was performed by using a two-oscillator model and assuming an excitonic emission energy of 2.825 eV at T ¼ 4 K taken from a ZnSe reference sample (in coincidence with literature 23 ), and the dispersion relation of the bare cavity centered at 2.817 eV at k ¼ 0. Hence, the sample possesses a negative detuning of about d ¼ À8 meV between the cavity resonance and the excitonic emission.…”

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confidence: 99%