Optical grating recording in ChG thin film by electron beam

Kolbjonoks, Vadims; Gerbreders, V.; Teteris, J.; Gerbreders, A.

doi:10.1016/j.jnoncrysol.2013.01.053

Cited by 7 publications

(3 citation statements)

References 3 publications

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“…The As-S-Se thin film etching rate changes rapidly up to exposure doses with a value of 400 µAs/cm2, then the curve reached saturation and did not change the etching rate value with time, meaning the threshold for this type of electron resist has been reached and further changes impossible. The etching rate was determined by monitoring the local thickness of the As-S-Se thin film using thin-film interference [3]. Repeated dependence of the profile height on electron dose obtained for As-S-Se thin-film makes this amorphous glassy resist useful for recording of multilevel diffractive elements [4].…”

Section: Resultsmentioning

confidence: 99%

Chalcogenide thin films as a material for holographic applications

Kolbjonoks

Krams

2023

Holography: Advances and Modern Trends VIII

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A focused electron beam was used to interact with the chalcogenide thin film substrate. The result of the interaction is presented as controlled relief formation on the substrate surface after etching in an alkaline amine solution. By managing focused electron beam parameters, diffractive optical elements and hidden image effect by means of digital hologram have been recorded. As a result, reflected laser beam of the thin film substrate in the near field represents the hidden image that has been recorded along the hologram in the background. The possibilities of practical usage of this substrate as the material for the production of holograms and diffractive optical elements are discussed.

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Section: Resultsmentioning

confidence: 99%

Chalcogenide thin films as a material for holographic applications

Kolbjonoks

Krams

2023

Holography: Advances and Modern Trends VIII

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“…Tanaka 71 reported that electrostatic force and electro-induced fluidity is the likely mechanism for the structural transformation. These chalcogenide glass films have been since used for fabricating gratings and optical diffractive elements 72 , 73 . Over the years, several alloyed compositions of As-Ge containing chalcogenide glasses, such as As40Se10normalS40Ge10, 64 Ge4As4Se92, 74 Ge30As4normalS66, 75 Ge9As9Se82, and Ge16As24Se60, have been studied for electron beam patterning 76 .…”

Section: Metal-containing Resists In Electron Beam Lithography: An Ov...mentioning

confidence: 99%

“…These chalcogenide glass films have been since used for fabricating gratings and optical diffractive elements. 72,73 Over the years, several alloyed compositions of As-Ge containing chalcogenide glasses, such as As 40 Se 10 S 40 Ge 10 , 64 Ge 4 As 4 Se 92 , 74 Ge 30 As 4 S 66 , 75 Ge 9 As 9 Se 82 , and Ge 16 As 24 Se 60 , have been studied for electron beam patterning. 76 In addition, negative-tone electron beam patterning has also been shown among chalcogenide glass compositions comprising of Ge-Sb-Se, 77 P-Ge-Se, 78 and Sb-Se.…”

Section: Inorganic Resists Based On Chalcogenide Glassesmentioning

confidence: 99%

Review of metal-containing resists in electron beam lithography: perspectives for extreme ultraviolet patterning

Saifullah

Tiwale

Ganesan

2022

J. Micro/Nanopattern. Mats. Metro.

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Background: Metal-containing resists entered the mainstream semiconductor industry process flow to mitigate the low absorbance of extreme ultraviolet (EUV) radiation by thin films of organic resists that lead to poor sensitivity and their inability to handle rigors of development and etching conditions.Aim: The long and rich history of using metal-containing resists in electron beam lithography can offer interesting lessons, pointers, and insights to the relatively newcomer EUV lithography, which is slightly over a decade old.Approach: Electron beam lithography has been enjoying a considerable amount of freedom in the choice of resist materials for close to 50 years; especially the use of metal-containing resists to attain not only single digit nanometer resolution, higher sensitivity, and etch resistance but also lower line-edge roughness. Here, we make a comprehensive historical review of the progress made in the patterning of metal-containing resists in electron beam lithography and derive insights that can be potentially useful in EUV patterning.Perspectives: Small molecular weight resists are proven to be crucial for achieving higher resolution with low line-edge roughness. Simplifying process flow by reducing etch-stack-layers is conceivable with metal-containing resists, along with direct-patterning of functional materials for heterogeneous integration. Efficient contact hole patterning at tighter pitches may be incumbent on progress in positive-tone resist research.

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