Optical in situ monitoring of MOVPE GaSb(100) film growth

Möller, K.; Kollonitsch, Z.; Giesen, C.; Heuken, M.; Willig, F.; Hannappel, Thomas

doi:10.1016/s0022-0248(02)01928-0

Cited by 22 publications

(25 citation statements)

References 26 publications

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“…Ratios other than this gradually led to increased surface roughness, as determined by LLS. These ratios are highly species-and reactor-specific: analogous experiments performed by the Möller et al [17] using triethylgallium and triethylantimony precursors and RAS as the diagnostic tool found an optimum ratio of 1.2 to 1.8. With the optimum operating conditions established, heteroepitaxial growth of GaSb on (001)GaAs was undertaken.…”

Section: Original Papermentioning

confidence: 92%

Real‐time diagnostics for metalorganic vapor phase epitaxy

Aspnes

2005

Physica Status Solidi (b)

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Metalorganic vapor phase epitaxy is a complicated process whereby constituents of incoming reactant species are incorporated into the growing crystal through a number of stages. A range of optical probes has been developed to provide detailed information about these stages and the sample as growth proceeds. While many of these probes are mature, spectroscopic ellipsometry (SE) and polarimetry (SP) are both undergoing rapid improvements as a result of applications in integrated-circuits technology. Here, I review some of these advances and the motivation behind them, and illustrate capabilities with an application regarding the heteroepitaxial growth of GaSb on GaAs.

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Section: Original Papermentioning

confidence: 92%

Real‐time diagnostics for metalorganic vapor phase epitaxy

Aspnes

2005

Physica Status Solidi (b)

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“…The latter point is important as it may explain why the overall c(2 Â 6) symmetry is still observed in LEED [11,14] or RHEED [4,5] studies of the surface. Furthermore, spatial fluctuations in the defect concentration ensures that the ECR can be broken over a short distance (even if it is, on the whole, satisfied) which would explain the STS observation of weak surface metallicity [3].…”

Section: Optical Spectramentioning

confidence: 99%

“…It is important to note that these experiments were carried out on different samples prepared under different conditions and growth methods, namely MBE and MOCVD. Furthermore, after preparation of the deposited layer, different techniques were employed to avoid surface contamination [13][14][15]. Despite some uncertainty in the baseline position, it is nonetheless clear that the spectra are very similar.…”

Section: Optical Spectramentioning

confidence: 99%

“…By substituting Ga atoms into the second layer we succeed in lowering the surface charge, rendering the surface semiconducting and lowering its energy. Evidence for their existence is given by means of theoretical interpretation of previously reported reflectance anisotropy spectroscopy (RAS) measurements [13][14][15] carried out on the GaSb(001)-c(2 Â 6) surface. In the final part of the paper, we illustrate how the excess electronic charge associated with the presence of long Sb dimer chains is itself responsible for driving the formation of the defects.…”

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confidence: 99%

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Optical properties of GaSb(001)‐c(2 × 6): The role of surface antisite defects

Hogan

Magri

Sole

2010

Physica Status Solidi (b)

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We consider the formation of surface antisite defects on a previously proposed model for the GaSb(001)-c(2 Â 6) surface. Based on ab initio total energy calculations, we show how these defects stabilize the otherwise metallic surface and how their formation is driven by the excess charge associated with the Sbrich surface conditions. The surface-sensitive optical technique of reflectance anisotropy spectroscopy is shown to be crucial for detecting the defects, and computation of spectra yields a good agreement with experiment when defects are included in the surface reconstruction.

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“…Metallicity is removed by incorporation of subsurface Ga antisite defects. We provide evidence for the existence of such features by means of theoretical interpretation of existing reflectance anisotropy (RA) spectroscopy measurements [12,13] carried out on the GaSb(001)-c(2× 6) surface, and total energy calculations.…”

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confidence: 98%

Structure and optical properties of the Sb‐stabilized GaSb(001) surface

Hogan

Magri

Sole

2010

Phys. Status Solidi (c)

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We suggest a model for the c(2 x 6) phase of the Sbstabilized GaSb(001) surface, whereby Sb atoms in the second layer are partially substituted by Ga. This ‘doping’ effect enables the surface to fulfil the electron counting rule whilst maintaining a reconstruction based on long dimer chains. Total energy calculations verify that the suggested reconstruction is relatively stable, and calculations of the reflectance anisotropy spectra confirm that it comprises a major component of the largely disordered surface (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Optical in situ monitoring of MOVPE GaSb(100) film growth

Cited by 22 publications

References 26 publications

Real‐time diagnostics for metalorganic vapor phase epitaxy

Real‐time diagnostics for metalorganic vapor phase epitaxy

Optical properties of GaSb(001)‐c(2 × 6): The role of surface antisite defects

Structure and optical properties of the Sb‐stabilized GaSb(001) surface

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