Optical properties of GaSb(001)‐<i>c</i>(2 × 6): The role of surface antisite defects

Hogan, Conor; Magri, Rita; Sole, R. Del

doi:10.1002/pssb.200983959

Cited by 3 publications

(3 citation statements)

References 25 publications

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“…1(b)], which is attributed to an Sb-rich regime with Sb-Sb dimer chains on the surface. 26 The As 3d spectrum of the arsenic capped GaSb [ Fig. 2(a)] surface shows peaks at 41.6 and 44.9 eV, which are attributed to elemental arsenic from the cap and arsenic oxides on the surface of the cap, respectively.…”

Section: Resultsmentioning

confidence: 99%

Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al2O3 on GaSb(100)

Zhernokletov¹,

Dong²,

Brennan³

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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In-situ monochromatic x-ray photoelectron spectroscopy, low energy electron diffraction, ion scattering spectroscopy, and transmission electron microscopy are used to examine the GaSb(100) surfaces grown by molecular beam epitaxy after thermal desorption of a protective As or Sb layer and subsequent atomic layer deposition (ALD) of Al2O3. An antimony protective layer is found to be more favorable compared to an arsenic capping layer as it prevents As alloys from forming with the GaSb substrate. The evolution of oxide free GaSb/Al2O3 interface is investigated by “half-cycle” ALD reactions of trimethyl aluminum and deionized water.

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Section: Resultsmentioning

confidence: 99%

Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al2O3 on GaSb(100)

Zhernokletov¹,

Dong²,

Brennan³

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…The (4 × 3) reconstruction family, 25 the (2 × 4), 26-28 the (2 × 8), 29 the c (2 × 6), 30,31 and the c(2 × 10) 30 reconstructions have all been proposed to explain STM observations on GaSb. It is reasonable to consider these reconstructions for the GaSbBi surface as well.…”

Section: Introductionmentioning

confidence: 97%

“…However, the c (2 × 6) and c (2 × 10) reconstructions have not been shown to be stable on GaSb, often attributed to the violation of the electron counting model (ECM). [30][31][32] In those studies, various compositional configurations were tested where Ga was substituted for Sb on second layer Sb sites in an effort to satisfy the ECM. Some of these configurations were energetically more favorable, but not enough to stabilize these reconstructions relative to the (4 × 3) reconstruction.…”

Section: Introductionmentioning

confidence: 99%

Bismuth-induced surface structure and morphology in III-V semiconductors

Duzik

2015

SPIE Proceedings

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Bi is the largest group V element and has a number of advantages in III-V semiconductor properties, such as bandgap reduction, spin-orbit coupling, a preserved electron mobility over III-V-N materials, and nearly ideal surfactant properties resulting in a surface smoothing effect on GaAs. However, the mechanism for this behavior is not well understood. Insight on the mechanism is obtained through study of the Bi-terminated GaAs surface morphology and atomic reconstructions produced via molecular beam epitaxy (MBE). Experimental scanning tunneling microscopy (STM) characterization of the Bi/GaAs surface reveal disordered (1x3), (2x3), and (4x3) reconstructions, often sharing the same reflective high-energy electron diffraction (RHEED) patterns. Roughness on the micron length scale decreases as the step widen, attributed to the concurrent increase of opposite direction step edges on the nanometer length scale. Corresponding cluster expansion, density functional theory (DFT), and Monte Carlo simulations all point to the stability of the disordered (4x3) reconstruction at finite temperature as observed in experimental STM. The effects of incorporated Bi are determined through epitaxial GaSbBi growth on GaSb with various Ga:Sb:Bi flux ratios. Biphasic surface droplets are observed with sub-droplets, facets, and substrate etching. Despite the rough growth front, X-ray diffraction (XRD) and Rutherford backscatter (RBS) measurements show significant Bi incorporation of up to 12% into GaSb, along with a concurrent increase of background As concentration. This is attributed to a strain auto-compensation effect. Bi incorporation of up to 10% is observed for the highest Bi fluxes while maintaining low surface droplet density.

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Surface reconstruction stability of Bi/GaSb surfaces

Duzik

Millunchick

2014

Journal of Applied Physics

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The phase diagram of the Bi/GaSb surface reconstructions has been established using density functional theory and cluster expansion computational methods. The predominant reconstructions in the alloy system are the same as those found for pure GaSb. That is, the (4 × 3) family of reconstructions dominate the phase diagram. However, at low Sb and Bi chemical potentials, the calculations predict a (2 × 1) structure for both GaSb and Bi/GaSb. It is found that Bi does not stabilize any additional structures, and Bi does not readily incorporate into the surface in the presence of Sb.

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Optical properties of GaSb(001)‐c(2 × 6): The role of surface antisite defects

Cited by 3 publications

References 25 publications

Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al2O3 on GaSb(100)

Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al2O3 on GaSb(100)

Bismuth-induced surface structure and morphology in III-V semiconductors

Surface reconstruction stability of Bi/GaSb surfaces

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