Optical investigation of stacking faults in 4H–SiC epitaxial layers: Comparison of 3C and 8H polytypes

Juillaguet, Sandrine; Robert, Teddy; Camassel, Jean

doi:10.1016/j.mseb.2008.11.004

Cited by 5 publications

(4 citation statements)

References 23 publications

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“…Indeed, the ð4; 4Þ and ð3; 5Þ defects are constituted by two twinned cubic sequences, so that the assumption of the depth of the well equal to the (4H/3C) band offset cannot be considered valid. 22) Another important result of these calculations is the extremely low formation energy obtained for both defects, between one and two orders of magnitude smaller than any other known SF in 4H-SiC. 1) This finding supports the experimental observation that both defects have been extensively found in as-grown epilayers.…”

Section: Type Of Defect Sf Energy (Esupporting

confidence: 77%

First Principles Investigation on the Modifications of the 4H-SiC Band Structure Due to the (4,4) and (3,5) Stacking Faults

Camarda

Magna

Delugas

et al. 2011

Appl. Phys. Express

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Using first principle calculations, we investigated the energetic and electronic properties of two stacking faults that have been recently identified experimentally in as-grown 4H-SiC homo epitaxial films. We found that both defects generate two separate split-off bands localized below the bottom of the conduction band. The energy of the deepest intra gap state associated with each defect is in excellent agreement with photoluminescence measurements. Furthermore, we calculated formation energies of 0.3 and 2.4 mJ/m2 for the (4,4) and (3,5) defects, respectively, much smaller than the energy of any other stacking fault; this result justifies their dominance in as-grown epilayers.

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Section: Type Of Defect Sf Energy (Esupporting

confidence: 77%

First Principles Investigation on the Modifications of the 4H-SiC Band Structure Due to the (4,4) and (3,5) Stacking Faults

Camarda

Magna

Delugas

et al. 2011

Appl. Phys. Express

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“…This is due in part to a more substantial contribution of surface states, particularly evident in the BE region below ∼2 eV (note that in the crystalline samples, photoelectrons are collected along the surface normal, whereas in the vertically aligned nanowires, they are collected at a grazing take-off angle, increasing surface sensitivity). Furthermore, the broadening of the spectrum by ∼0.1 eV in the rising edge of the valence band is attributed to electric fields from potential wells filling with electrons . The electric field strength depends on the number of nearby wells, and because of the stochastic distribution of faults, a distribution of electric field strength acting on photoelectrons naturally arises. , A smaller contribution to the broadening is the distribution of valence-band offsets (∼0.05 eV) within the stacking faults .…”

Section: Methodsmentioning

confidence: 99%

“…Furthermore, the broadening of the spectrum by ∼0.1 eV in the rising edge of the valence band is attributed to electric fields from potential wells filling with electrons. 29 The electric field strength depends on the number of nearby wells, and because of the stochastic distribution of faults, a distribution of electric field strength acting on photoelectrons naturally arises. 24,30 A smaller contribution to the broadening is the distribution of valence-band offsets (∼0.05 eV) within the stacking faults.…”

Section: Methodsmentioning

confidence: 99%

Atomic-Scale Electronic Characterization of Defects in Silicon Carbide Nanowires by Electron Energy-Loss Spectroscopy

et al. 2018

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The atomic-level resolution of scanning transmission electron microscopy (TEM) is used for structural characterization of nanomaterials, but the resolution afforded by TEM also enables electronic characterization of defects in these materials through electron energy-loss spectroscopy (EELS). Here, the power of EELS is harnessed to characterize the local band gap of inclusion defects in hexagonal silicon carbide nanowires with a high density of stacking faults. The band gaps we extract from the EELS data align within 0.1 eV of expected values for hexagonal silicon carbide and stacking faults within hexagonal silicon carbide. These experiments show that individual cubic phase inclusions in hexagonal silicon carbide significantly alter the local electronic structure, in particular, the band gap, in contrast to the polarizability tensor that retains the characteristic signature of the global hexagonal crystal structure.

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“…Degradation of the electrical characteristics of bipolar SiC devices is explained by the presence of SF in crystal bulk [18,19]. Formation of different polytypes under the same thermodynamic conditions can be understood when using optical spectroscopy analysis [1,20].…”

Section: Introductionmentioning

confidence: 99%

8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions

Vlaskina¹

2013

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. In this paper the results of photoluminescence researches devoted to phase transitions in 6H-3C-SiC have been presented. High pure 6H-SiC crystals grown by Tairov's method with and without polytype joint before and after plastic deformation at high temperature annealing were investigated using optical spectroscopy. Low temperature photoluminescence changes in the transition phase of SiC crystal represented with the stalking fault spectra within the temperature range 4.2 to 35 K. The stalking fault spectra indicate formation of metastable nanostructures in SiC crystals (14H 1 4334, 10H 2 55, 14H 2 77). The phononless part of each stalking fault spectrum consists of two components of radiative recombination that are responsible for hexagonal and cubic arrangement of atoms. Each of radiative recombination components in the stalking fault spectrum has the width of entire band 34 meV and shifts relative to each other by 26 meV. The overlap area of those components equals to 8 meV. The super-fine structure of the recombination components in spectrum is observed, and it is related to different Si -Si or C -C and Si -C bonds. Behavior of all the stalking fault spectra is similar (temperature, decay of luminescence). The processes of the phase transition are explained by the mechanism of interfacial rearrangements in the SiC crystals.

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Optical investigation of stacking faults in 4H–SiC epitaxial layers: Comparison of 3C and 8H polytypes

Cited by 5 publications

References 23 publications

First Principles Investigation on the Modifications of the 4H-SiC Band Structure Due to the (4,4) and (3,5) Stacking Faults

First Principles Investigation on the Modifications of the 4H-SiC Band Structure Due to the (4,4) and (3,5) Stacking Faults

Atomic-Scale Electronic Characterization of Defects in Silicon Carbide Nanowires by Electron Energy-Loss Spectroscopy

8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions

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