Effect of stacking fault and temperature on deformation behaviors of nanocrystalline Mg J. Appl. Phys. 112, 054322 (2012) Atomic structure of prismatic stacking faults in nonpolar a-plane GaN epitaxial layers Appl. Phys. Lett. 101, 112102 (2012) Importance of excitonic effects and the question of internal electric fields in stacking faults and crystal phase quantum discs: The model-case of GaN J. Appl. Phys. 112, 053512 (2012) Ruddlesden-Popper faults in LaNiO3/LaAlO3 superlattices J. Appl. Phys. 112, 013509 (2012) Optical and structural studies of homoepitaxially grown m-plane GaN Appl. Phys. Lett. 100, 172108 (2012) Additional information on J. Appl. Phys. We report on Shockley-Frank stacking faults (SFs) identified in 6H-SiC by a combination of low temperature photoluminescence (LTPL) and high resolution transmission electron microscopy (TEM). In the faulted area, stacking faults manifested as large photoluminescence emissions bands located in between the 6H-SiC signal (at $2.99 eV) and the 3C-SiC bulk-like one (at $2.39 eV). Each of the stacking fault related emission band had a four-fold structure coming from the TA, LA, TO, and LO phonon modes of 3C-SiC. Up to four different faults, with four different thickness of the 3C-SiC lamella, could be observed simultaneously within the extent of the laser excitation spot. From the energy of the momentum-conservative phonons, they were associated with excitonic energy gaps at E gx1 ¼ 2.837 eV, E gx2 ¼ 2.689 eV, E gx3 ¼ 2.600 eV and E gx4 ¼ 2.525 eV. In the same part where low temperature photoluminescence was performed, high resolution transmission electron microscopy measurements revealed stacking faults which, in terms of the Zhdanov notation, could be recognized as SFs (3, 4), (3,5), (3, 6), (3, 7), (3, 9), (3, 11), (3, 16) and (3, 22), respectively. Among them stacking fault (3, 4) was the most common one, but a faulted region with a (4, 4) 8H-SiC like sequence was also found. Using a type II 6H/3C/6H quantum-well model and comparing with experimental results, we find that the photoluminescence emissions with excitonic band gaps at 2.837 eV (E gx1 ), 2.689 eV (E gx2 ), 2.600 eV (E gx3 ) and 2.525 eV (E gx4 ) come from SFs (3, 4), (3, 5), (3, 6) and (3, 7), respectively. A possible formation mechanism of these SFs is suggested, which involves a combination of Frank faults with Shockley ones. This provides a basic understanding of stacking faults in 6H-SiC and gives a rapid and non-destructive approach to identify SFs by low temperature photoluminescence. V C 2012 American Institute of Physics.

The formation of in‐grown stacking faults (SFs) in chemical vapour deposition (CVD) grown 4H‐SiC epilayer has been studied by high‐resolution transmission electron microscopy (HRTEM) and low‐temperature photoluminescence (LTPL). Local inhomogeneities in the SF density have been found, where different SF arrangements appear. They range from pure 8H‐SiC unit cells to a few distinguished sequences, forming in some cases long‐range semi‐periodic incommensurate structures. Despite such large dispersion, the same optical (LTPL) signature is always found. This is discussed in the light of coupled quantum well models. HRTEM image showing the formation of an extended defect (16 bilayers thick) in a CVD grown 4H‐SiC epitaxial layer.

We present a structural and optical investigation of nitrogen-doped single crystals of cubic silicon carbide prepared by the continuous feed - physical vapour transport method. Self-nucleated crystals were produced which exhibited well faceted square and triangular shapes. KOH etching was used to characterize the structural defects, like stacking faults and dislocations. The effect of changing the nitrogen flow rate on the different crystalline orientations was investigated by Raman spectroscopy and low temperature photoluminescence techniques.

A new type of 6H zigzag faults has been identified from high resolution transmission electron microscopy (HRTEM) measurements performed on low-doped 4H-SiC homoepitaxial layer grown on off-axis substrates in a hot-wall CVD reactor. They are made of half unit cells of 6H with corresponding low temperature photoluminescence (LTPL) response ranging from about 3 eV to 2.5 eV at liquid helium temperature.

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