6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers

Robert, Teddy; Marinova, Maya; Juillaguet, Sandrine; Henry, Anne; Polychroniadis, Efstathios K.; Camassel, Jean

doi:10.4028/www.scientific.net/msf.645-648.347

Cited by 7 publications

(9 citation statements)

References 16 publications

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“…The corresponding band structure parameters used for QW calculations are listed in Table II. 9,18 Apart from the band offsets, there are two major factors which determine the recombination energy in a QW, namely quantum confinement and Stark effect due to the in-built electronic field. In hexagonal SiC, the four tetrahedral C-Si bonds are not equivalent and bond-to-bond charge transfer and ionic relaxation can cause an intrinsic spontaneous polarization directed opposite to the c-axis in crystal.…”

Section: Calculation By Quantum-well Model and Comparison With Expmentioning

confidence: 99%

Shockley-Frank stacking faults in 6H-SiC

Sun

Robert

Andreadou

et al. 2012

Journal of Applied Physics

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Effect of stacking fault and temperature on deformation behaviors of nanocrystalline Mg J. Appl. Phys. 112, 054322 (2012) Atomic structure of prismatic stacking faults in nonpolar a-plane GaN epitaxial layers Appl. Phys. Lett. 101, 112102 (2012) Importance of excitonic effects and the question of internal electric fields in stacking faults and crystal phase quantum discs: The model-case of GaN J. Appl. Phys. 112, 053512 (2012) Ruddlesden-Popper faults in LaNiO3/LaAlO3 superlattices J. Appl. Phys. 112, 013509 (2012) Optical and structural studies of homoepitaxially grown m-plane GaN Appl. Phys. Lett. 100, 172108 (2012) Additional information on J. Appl. Phys. We report on Shockley-Frank stacking faults (SFs) identified in 6H-SiC by a combination of low temperature photoluminescence (LTPL) and high resolution transmission electron microscopy (TEM). In the faulted area, stacking faults manifested as large photoluminescence emissions bands located in between the 6H-SiC signal (at $2.99 eV) and the 3C-SiC bulk-like one (at $2.39 eV). Each of the stacking fault related emission band had a four-fold structure coming from the TA, LA, TO, and LO phonon modes of 3C-SiC. Up to four different faults, with four different thickness of the 3C-SiC lamella, could be observed simultaneously within the extent of the laser excitation spot. From the energy of the momentum-conservative phonons, they were associated with excitonic energy gaps at E gx1 ¼ 2.837 eV, E gx2 ¼ 2.689 eV, E gx3 ¼ 2.600 eV and E gx4 ¼ 2.525 eV. In the same part where low temperature photoluminescence was performed, high resolution transmission electron microscopy measurements revealed stacking faults which, in terms of the Zhdanov notation, could be recognized as SFs (3, 4), (3,5), (3, 6), (3, 7), (3, 9), (3, 11), (3, 16) and (3, 22), respectively. Among them stacking fault (3, 4) was the most common one, but a faulted region with a (4, 4) 8H-SiC like sequence was also found. Using a type II 6H/3C/6H quantum-well model and comparing with experimental results, we find that the photoluminescence emissions with excitonic band gaps at 2.837 eV (E gx1 ), 2.689 eV (E gx2 ), 2.600 eV (E gx3 ) and 2.525 eV (E gx4 ) come from SFs (3, 4), (3, 5), (3, 6) and (3, 7), respectively. A possible formation mechanism of these SFs is suggested, which involves a combination of Frank faults with Shockley ones. This provides a basic understanding of stacking faults in 6H-SiC and gives a rapid and non-destructive approach to identify SFs by low temperature photoluminescence. V C 2012 American Institute of Physics.

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Section: Calculation By Quantum-well Model and Comparison With Expmentioning

confidence: 99%

Shockley-Frank stacking faults in 6H-SiC

Sun

Robert

Andreadou

et al. 2012

Journal of Applied Physics

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“…This feature allows distinguishing them from (2,3 3 ) stacking faults that exhibit a similar PL peak centred at about 2.9 eV and have a typical bar shape (16). Moreover the (2,3 3 ) SFs have typical dimension of several hundreds of microns on the direction normal to growth direction (11)(12)(13)(14)(15)(16)(17)(18)(19)(20).…”

Section: Methodsmentioning

confidence: 96%

High Power Density UV Optical Stress for Quality Evaluation of 4H-SiC Epitaxial Layers

Canino¹,

Camarda²,

Via³

2011

ECS Trans.

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An application of an optical characterization technique able to evaluate the quality of 4H-SiC epitaxial layers is here proposed. By using high power density UV optical pumping it was possible to stress 4H-SiC epitaxial layers after the CVD growth process and verify the generation and evolution of Single Shockley faults across the interface through the epitaxial layer without the fabrication of bipolar junctions. Thanks to this characterization method, it is possible to choose a good CVD process for the growth of epitaxial layers.

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“…In some other parts, a series of stacking faults with optical signature ranging from 3.01 eV to 2.52 eV was also found [8]. Typical spectra are shown in Fig 1. with four main peaks corresponding to the energy of the four momentum-conservative phonons replicas (TA ~ 46 meV, LA ~ 77 meV, TO ~ 95 meV and LO ~ 105 meV).…”

Section: Ltplmentioning

confidence: 94%

Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers

Robert

Marinova

Juillaguet

et al. 2011

MSF

Self Cite

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Abstract. Both 3C and 6H stacking faults have been observed in a low doped 4H-SiC epitaxial layer grown in a hot-wall CVD reactor on a heavily doped (off-axis) 4H-SiC substrate. They appear differently on the different parts of sample, with energetic dispersion ranging from 3.01 eV to 2.52 eV. Since they behave as natural type-II quantum wells in the 4H-SiC matrix, the thickness dependence of the excitonic recombination is investigated using the standard effective mass approximation. The results are discussed in terms of built-in electric field and inter-wells coupling effects.

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6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers

Cited by 7 publications

References 16 publications

Shockley-Frank stacking faults in 6H-SiC

Shockley-Frank stacking faults in 6H-SiC

High Power Density UV Optical Stress for Quality Evaluation of 4H-SiC Epitaxial Layers

Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers

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