Optical loss and interface morphology in AlGaAs∕GaAs distributed Bragg reflectors

Zhang, Z.; Würtemberg, R. Marcks von; Berggren, Jesper; Hammar, Mattias

doi:10.1063/1.2779242

Cited by 14 publications

(2 citation statements)

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“…(3) In the use of ternary or quaternary alloys as DBR layers, it is crucial to maintain uniformity in compositions and thicknesses across the entire wafer [34][35][36], (4) As a result of (1)-(3), a need to use different, and sometimes compromised growth conditions for the two layers, which often results in interfacial disorder or deterioration in surface morphology [37,38], and (5) Last but not least, a difference in lattice parameters between the constituent layers leading to high-tensile or compressive strains during the growth of DBRs [39,40].…”

Section: Fabrication Techniques Of Dbrsmentioning

confidence: 99%

Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

2019

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A distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor microcavities and vertical cavity surface emitting lasers (VCSELs). The success in epitaxial GaAs DBR mirrors paved the way for the ubiquitous deployment of III-V VCSELs in communication and mobile applications. However, a similar development of GaN-based blue VCSELs has been hindered by challenges in preparing DBRs that are mass producible. In this article, we provide a review of the history and current status of forming DBRs for GaN VCSELs. In general, the preparation of DBRs requires an optimization of epitaxy/fabrication processes, together with trading off parameters in optical, electrical, and thermal properties. The effort of epitaxial DBRs commenced in the 1990s and has evolved from using AlGaN, AlN, to using lattice-matched AlInN with GaN for DBRs. In parallel, dielectric DBRs have been studied since 2000 and have gone through a few design variations including epitaxial lateral overgrowth (ELO) and vertical external cavity surface emitting lasers (VECSEL). A recent trend is the use of selective etching to incorporate airgap or nanoporous GaN as low-index media in an epitaxial GaN DBR structure. The nanoporous GaN DBR represents an offshoot from the traditional epitaxial approach and may provide the needed flexibility in forming manufacturable GaN VCSELs. The trade-offs and limitations of each approach are also presented.

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Section: Fabrication Techniques Of Dbrsmentioning

confidence: 99%

Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

2019

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“…However, the previous reports neither clearly described the mechanisms for such a light trapping design nor analyzed the impacts of the DBR on the solar cell performance, even though the scattering loss in DBRs have been studied in other photonic devices. 9,10 Here we analyze this structure using fundamental photonic band theory and electromagnetic wave analysis. We discover that the light is scattered into the DBR due to the band folding in the presence of the periodic grating and reflected back at the bottom interface.…”

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Integrated photonic structures for light trapping in thin-film Si solar cells

Sheng

Johnson

Broderick

et al. 2012

Applied Physics Letters

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We explore the mechanisms for an efficient light trapping structure for thin-film silicon solar cells. The design combines a distributed Bragg reflector (DBR) and periodic gratings. Using photonic band theories and numerical simulations, we discover that light can be scattered into the DBR by gratings, with an unusual way of light trapping different from metal reflectors and photonic crystals. We further investigate the influence of DBR on generated photocurrent in different device configurations. These results would provide new design rules for photonic structures in thin-film solar cells. V

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Optical properties of intermixed vertical cavity surface emitting lasers: a theoretical model

Khreis

Al-Omari

2016

Opt Quant Electron

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Optical loss and interface morphology in AlGaAs∕GaAs distributed Bragg reflectors

Abstract: Articles you may be interested inScattering loss and effective index step of asymmetric cladding surface-etched distributed Bragg reflector lasers at 850 nm

Cited by 14 publications

References 10 publications

Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

Integrated photonic structures for light trapping in thin-film Si solar cells

Optical properties of intermixed vertical cavity surface emitting lasers: a theoretical model

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