Optical modeling of high-performance GaAs based photodetector with periodic right triangular texturization on nanopillar arrays structure

Abstract

The high spectral responsivity of a photodetector depends upon proficient light absorption. In this respect, surface reflectance possesses a serious threat to the effective light absorption mechanism resulting in poor quantum efficiency. This paper presents an analytical investigation of a GaAs based periodic right triangular cut textured vertical nanopillar structural model deployed over a 50 μm × 50 μm planar front detector’s surface in reducing surface reflectivity. The geometrical analysis of the proposed model exhibits a 99.9% absorbance and 0.85 A W−1 photoresponsivity at 0.8 μm operating wavelength with a mere 0.5 μm depletion width.

Optical modelling of a GaAs/GaSb core–shell cone-topped octagonal-faced nanopillar array with periodic trapezoidal textured cut for high photon trapping efficiency

“…The benefit of the adopting trapezoidal based nanotextured cut as compared to the previously adopted nanotextures [16,18,19] The analytical investigation of the light reflectance followed within the proposed cone topped octagonal faced nanopillar model with trapezoidal nanotextures over it has compared with the previously proposed right triangular nanotextures as well as pyramidal cut textures over the octagonal faced nanopillar structure.For the geometrical ray analysis, two 30 0 incident incoming photons have been considered to get trapped within the interpillar gap of the nanopillar array.…”

“…In the previous work, authors have demonstrated the effect of nano-texurization over vertical nanopillar structures in mitigating total light reflectance phenomenon which includes: GaAsmaterial based nanotextured pyramidal cut nanopillar array [16], InGaAs material based hexagonal nanopillar array [17],right triangular texturized GaAs material based square shaped nanopillardeployed over the front photodetector's surface [18] and half octagonal cut based hexagonal shaped nanopillar array over the light reflectance minimization for high photodetector's responsivity [19].However, to boost the light absorbance to the next level as well to trap maximum incoming photons the nanopillar structure has been upgraded to octagonal faced. This work proposes a cone topped GaAs/GaSb core-shell radial junction based octagonal faced nanopillar array with periodic n-trapezoidal cut based texturization over the nanopillar structure to be deployed over a circular shaped detector's planar surface.The conical top over the octagonal faced nanopillar structure has has been adopted in order to reduce the effective refractive index of air semiconductor mismatch to a lowest level for the 0 0 incident photons.The structural parameters of the proposed model which includes the trapezoidal pattern based nanotextured cutting angle,optimal interpillar gap of the array as well as the light scattering mechanism within the proposed structure have been analytically investigated and modelled accordingly so as to trap the maximum incoming light.…”

Optical Modelling of GaAs/GaSb Core-Shell Cone Topped Octagonal Faced Nanopillar Array with Periodic Trapezoidal Textured Cut for High Photon Trapping Efficiency

“…The benefit of the adopting trapezoidal based nanotextured cut as compared to the previously adopted nanotextures [16,18,19] could be illustrated from Fig. 2.…”

“…In the previous work, authors have demonstrated the effect of nano-texurization over vertical nanopillar structures in mitigating total light reflectance phenomenon which includes: GaAsmaterial based nanotextured pyramidal cut nanopillar array [16], InGaAs material based hexagonal nanopillar array [17], right triangular texturized GaAs material based square shaped nanopillar deployed over the front photodetector's surface [18] and half octagonal cut based hexagonal shaped nanopillar array over the light reflectance minimization for high photodetector's responsivity [19]. However, to boost the light absorbance to the next level as well to trap maximum incoming photons the nanopillar structure has been upgraded to octagonal faced.…”

Analytical investigation of CdSe/CdS/ZnSe‐based single‐core double‐shell nanotextured vertical nanopillar array antenna for broadband photodetection applications

“…The multiple-reflection phenomenon undergone within the array allows the incoming photons to increase their optical path length inside the nanopillar structure minimizing the reflection losses as compared to the planar front surface-based photodetector. The author's prior work [31][32][33][34] demonstrated different nanotextured pattern adopted over III-V material-based vertical nanopillar antennas for high light absorption efficiency and responsivity. However, nanotexturization pattern deployed over the core-double-layered shell hexagonal vertical nanopillar structure for attaining high photoresponsivity has not been explored in a wider length.…”