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The high spectral responsivity of a photodetector depends upon proficient light absorption. In this respect, surface reflectance possesses a serious threat to the effective light absorption mechanism resulting in poor quantum efficiency. This paper presents an analytical investigation of a GaAs based periodic right triangular cut textured vertical nanopillar structural model deployed over a 50 μm × 50 μm planar front detector’s surface in reducing surface reflectivity. The geometrical analysis of the proposed model exhibits a 99.9% absorbance and 0.85 A W−1 photoresponsivity at 0.8 μm operating wavelength with a mere 0.5 μm depletion width.

Efficient light absorption is the most crucial factor for high spectral responsive photodetection phenomenon. Nanopillars for photodetection constitute a great opportunity in enhancing the light absorption efficiency along with reducing the electrical cross-section of the device. Here an analytical investigation of a proposed periodic GaAs material based half octagonal cut based vertically oriented hexagonal nanopillar array deployed over a 5um x 5um front detector’s surface has been done for attaining an optimum light absorbance by reducing the surface reflectivity of the incoming photons. The geometrical analysis of the proposed model exhibits a 0.999 absorbance and 0.97A/W photoresponsivity along with 86% EQE at 1um operating wavelength.