Optical, morphological and electrical studies of Zn:PbS thin films

Touati, Baligh; Gassoumi, Abdelaziz; AlFaify, S.; Kamoun‐Turki, Najoua

doi:10.1016/j.mssp.2015.02.020

Cited by 58 publications

(19 citation statements)

References 24 publications

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“…Such disparity of the surface roughness with Sn concentration may be resulted from the reduction of the crystallite size in the PbS thin film because of the incorporation of Sn 2+ ions. Similar justification was reported by Touati et al All the AFM results are listed in Table . The SEM and AFM results of the present study showed that doping Sn produces significant effects on the surface roughness and morphology of PbS thin films.…”

Section: Resultssupporting

confidence: 89%

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Band gap tailoring of chemically synthesized lead sulfide thin films by in situ Sn doping

Hone

Dejene

Echendu

2018

Surface & Interface Analysis

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In the present report, undoped and tin (Sn)-doped lead sulfide thin films were synthesized via chemical bath deposition method. The effects of Sn molar concentration on the optical, structural, and morphological properties were systematically studied. The concentration of Sn in the chemical bath was characterized by the ratio of [Sn +2 ]/[Pb +2 ] and varied from 0 to 15 at.%. Both doped and undoped thin films were polycrystalline in nature with a face-centered cubic crystal structure; however, the preferred orientations of the crystallites were varied along the (111) and (200) planes with Sn-doping concentration. The X-ray powder diffraction results also showed that peak intensities and the crystalline size were decreased with increasing Sn concentration.The lattice constant varied with Sn concentration and found in the range of 6.020 to 5.944 Å. The variation of Sn concentration in PbS:Sn thin films were confirmed by energy dispersive X-ray analyses study. The scanning electron microscope and atomic force microscopy studies revealed that Sn doping had a critical role on the surface roughness and morphology of the PbS:Sn thin films. The optical band gap study showed that the band gap of PbS:Sn thin films were engineered from 0.676 to 1.345 eV because of incorporation of Sn +2 ions via cost-effective chemical route.Room temperature photoluminescence spectra showed a well-defined peak at 427 nm and shoulders at 405 and 462 nm for all Sn-doped and undoped PbS samples.

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Section: Resultssupporting

confidence: 89%

“…This is may be due to undoped PbS thin film losses its crystalline quality with Sn doping. Similar reports were forwarded by Touati et al and Rajashree and Balu for Zn:PbS and PbS:Ni thin films, respectively. In this study, the introduction of Sn 2+ ions into the PbS lattice induced an increase of strain.…”

Section: Resultssupporting

confidence: 79%

Band gap tailoring of chemically synthesized lead sulfide thin films by in situ Sn doping

Hone

Dejene

Echendu

2018

Surface & Interface Analysis

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“…Lead sulfide (PbS) continues to attract interest because of its unique optoelectronic properties and associated applications. It is a semiconductor having a narrow bulk direct bandgap of 0.41 eV at room temperature [ 1 ] and a large exciton Bohr radius of 18 nm [ 2 ]. It exhibits strong quantum confinement effects when synthesized under the form of nanoparticles (NPs) having an average size smaller than 18 nm.…”

Section: Introductionmentioning

confidence: 99%

Effect of the Helium Background Gas Pressure on the Structural and Optoelectronic Properties of Pulsed-Laser-Deposited PbS Thin Films

et al. 2021

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This work focuses on the dependence of the features of PbS films deposited by pulsed laser deposition (PLD) subsequent to the variation of the background pressure of helium (PHe). The morphology of the PLD-PbS films changes from a densely packed and almost featureless structure to a columnar and porous one as the He pressure increases. The average crystallite size related to the (111) preferred orientation increases up to 20 nm for PHe ≥ 300 mTorr. The (111) lattice parameter continuously decreases with increasing PHe values and stabilizes at PHe ≥ 300 mTorr. A downshift transition of the Raman peak of the main phonon (1LO) occurs from PHe = 300 mTorr. This transition would result from electron–LO–phonon interaction and from a lattice contraction. The optical bandgap of the films increases from 1.4 to 1.85 eV as PHe increases from 50 to 500 mTorr. The electrical resistivity of PLD-PbS is increased with PHe and reached its maximum value of 20 Ω·cm at PHe = 300 mTorr (400 times higher than 50 mTorr), which is probably due to the increasing porosity of the films. PHe = 300 mTorr is pointed out as a transitional pressure for the structural and optoelectronic properties of PLD-PbS films.

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“…Besides, Zn has a smaller ionic radius (0.741 Å) than Pb (1.15 Å), which makes it easier to diffused into PbS lattice to improve PbS properties. According to the literature, increase in Zn dopant in PbS host causes a decrease in grain size which enhanced its morphological, electrical, and optical properties [7,15,18,23]. More so, Zn-doped PbS prepared by CBD, having bandgap tailored from 1.14 to 1.74 eV with high electrical carrier electrical concentration of 2.82 × 10 17 cm −3 , mobility of 11.2 cm −2 V −1 s −1 and decreased electrical resistivity of 10.8 Ω −1 was reported as a good potential material for ideal solar cells absorber layer [9].…”

Section: Introductionmentioning

confidence: 99%

Effects of Zn doping concentration on the optical and photovoltaic properties of ZnxPb1−xS thin film-based solar cell prepared by chemical spray pyrolysis

et al. 2020

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The metal dopants in PbS thin films make a significant impact on its optical and electronic transport properties that make it useful for photovoltaic and other optoelectronic applications. The photovoltaic properties of Zn-doped nanostructured PbS thin films synthesized from zinc acetate, lead acetate, and thiourea as an absorber layer prepared using chemical spray pyrolysis were investigated. Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), and UV-visible spectrophotometry techniques were used to obtain stoichiometry, thickness, structural, and optical properties of the thin films before fabrication of Zn-PbS/CdS solar cell. The RBS revealed the stoichiometry ratio as Zn x Pb 1−x S and thickness range of 189.05-251.64 (10 15 atoms/cm 2). The inclusion of the Zn dopant drastically reduced the concentration of lead from the initial 40.93-14.95%. Optical analysis of the films gave high optical absorption and relatively low reflectance from visible toward the NIR region. An increase in energy bandgap was observed with Zn dopants inclusion from 0.53 to 1.65 eV, which fits the path of the solar radiation for maximum absorption. Photovoltaic properties revealed from the J-V measurement confirmed that Zn-doped sample 6% ZnAcet thin film solar cell gave a maximum short-circuit current density (J sc) of 17.30 mA/cm 2 , open-circuit (V oc) 390 mV, fill factor (FF) 0.48, and conversion efficiency (η) of 2.7%.

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Optical, morphological and electrical studies of Zn:PbS thin films

Cited by 58 publications

References 24 publications

Band gap tailoring of chemically synthesized lead sulfide thin films by in situ Sn doping

Band gap tailoring of chemically synthesized lead sulfide thin films by in situ Sn doping

Effect of the Helium Background Gas Pressure on the Structural and Optoelectronic Properties of Pulsed-Laser-Deposited PbS Thin Films

Effects of Zn doping concentration on the optical and photovoltaic properties of ZnxPb1−xS thin film-based solar cell prepared by chemical spray pyrolysis

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