Optical, morphological and electrical studies of thermally vacuum evaporated CdTe thin films for photovoltaic applications

Optimization of physical properties of vacuum evaporated CdTe thin films with the application of thermal treatment for solar cells

“…The microstructure of these films (TA-2 and TA-3 samples) did not change significantly and films showed small grains with equiaxed grain morphology and grain size is to be order of 32 nm. From the 3D images, it is observed that the size of the island is increased with annealing temperature which may be attributed to the saturation of diffusion and recrystallization [46]. The annealed films are observed to have larger and non-uniform grains as well as random orientation as compared to the as-deposited films.…”

Physical properties of vacuum evaporated CdTe thin films with post-deposition thermal annealing

“…The binary compounds such as II-VI semiconductors are paid more attention due to their potential applications especially in thin film solar cells. The cadmium telluride (CdTe) is a II-VI compound semiconductor and found most suitable candidate for the fabrication of thin film solar cells due to its optimum energy band gap (1.44 eV) at room temperature and high absorption coefficient ( 410 5 cm À 1 ) in the visible range [1][2][3][4]. It is one of the most promising materials for enormous potential applications especially in the field of solar cells and optoelectronic devices like γ and X-ray detectors, light emitting diodes (LEDs), field effect transistors (FETs), lasers etc.…”

Моделирование Процесса Резистивного Динамического Испарения В Вакууме

“…При проведении вычислитель-ных и натурных экспериментов использовался теллурид кадмия (CdTe) температура испарения которого при давлении 1.33 Pa равна 900 K [31][32][33]. Тогда для достиже-ния такой температуры, согласно выражениям (1)−(3) необходима мощность источника питания, равная 400 W. Подставляя в (3) соответствующее численное значение параметра m gr = 0.012 kg, получим τ set = 88 s. По про-шествии данного времени вещество в испарителе нагре-вается до температуры испарения (давление превыша-ет 1.33 Pa).…”