Physical properties of vacuum evaporated CdTe thin films with post-deposition thermal annealing

Optimization of physical properties of vacuum evaporated CdTe thin films with the application of thermal treatment for solar cells

“…The thermal annealing treatment at temperature 450°C creates another new diffraction peak at angular position 27.54°corresponding to reflections (200) which might be an indication of phase change with higher annealing treatment. The intensity of diffraction peaks are observed to increase with annealing treatment which may be attributed to the growth of the materials incorporated in the diffraction process and revealed an improvement in crystallinity [14,30]. The angular position of preferred reflection (111) is found to shift slightly towards lower side due to increase in corresponding lattice constant.…”

“…The average grain size (D) was calculated using the Scherrer relation and found in the range 23.69-44.94 nm. It is observed to increase with annealing temperature due to decrease in the corresponding FWHM from 0.3581 to 0.1886 which may be attributed to the strong interaction between the substrate and the vapor atoms due to annealing treatment and revealed to the improvement in the crystallinity [14]. The dislocation density is varied from 4.95 Â 10 11 cm À 2 to 17.81 Â 10 11 cm À 2 and observed to decrease with thermal annealing treatment due to increase in grain size.…”

“…It has enormous potential applications in the field of optoelectronic devices like solar cells, optical and nuclear detectors, light-emitting diodes (LEDs), field effect transistors, nonlinear integrated optical devices, lasers etc. The theoretical conversion efficiency of polycrystalline CdTe thin film solar cells is high (29%) and maximum reported experimental conversion efficiency is 20.4% [10][11][12][13][14][15].…”

Effect of thermal annealing on physical properties of vacuum evaporated In2S3 buffer layer for eco-friendly photovoltaic applications

“…The current is observed to decrease with annealing temperature which indicated that the low annealing temperature creates the minor crystal growth. The resistivity of the films is found to be increased and the electrical conductivity decreased with annealing temperature owing to the inverse relation with carrier concentration [43]. The increment in resistivity may be attributed to the contamination from furnace, grain boundary oxidation, sulfur loss due to leaching and elemental diffusion from the substrate into the thin film.…”

“…4a that the extinction coefficient is found to be increased with photon energy and found maximum at higher photon energy ( $4 eV), thereafter decreased continuously. It is also found to be decreased with post-deposition annealing which revealed to the dominance in density temperature dependence [42][43]. The refractive index is related to the electronic polarizability of ions and the local field inside the optical materials.…”