2020
DOI: 10.1021/acs.nanolett.0c03445
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Optical Multilevel Spin Bit Device Using Chiral Quantum Dots

Abstract: The technological advancement of data storage is reliant upon the continuous development of faster and denser memory with low power consumption. Recent progress in flash memory has focused on increasing the number of bits per cell to increase information density. In this work an optical multilevel spin bit, based on the chiral induced spin selectivity (CISS) effect, is developed using nanometer sized chiral quantum dots. A double quantum dot architecture is adsorbed on the active area of a Ni based Hall sensor… Show more

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Cited by 37 publications
(28 citation statements)
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“…To further study the device functionality for detecting chiral species, CdSe quantum dots (QDs) capped with a chiral l -cysteine ligand were introduced for evaluating the effectiveness of the sensor toward analytes with an optical absorption wavelength that coincides with the polarized light wavelength. Figure S5 shows absorbance and CD spectra of the QDs capped with a chiral l -cysteine ligand, verifying it is optically active. Figure a shows the chiral response (calculated as described in section 2 of the SI) of the sensor after introducing the l -cysteine- CdSe QDs under illumination with 532 nm (green) and 660 nm (red) light. The QDs absorption onset threshold is around 600 nm; therefore, light absorption by QDs is negligible for longer wavelength illumination at 660 nm.…”
mentioning
confidence: 79%
“…To further study the device functionality for detecting chiral species, CdSe quantum dots (QDs) capped with a chiral l -cysteine ligand were introduced for evaluating the effectiveness of the sensor toward analytes with an optical absorption wavelength that coincides with the polarized light wavelength. Figure S5 shows absorbance and CD spectra of the QDs capped with a chiral l -cysteine ligand, verifying it is optically active. Figure a shows the chiral response (calculated as described in section 2 of the SI) of the sensor after introducing the l -cysteine- CdSe QDs under illumination with 532 nm (green) and 660 nm (red) light. The QDs absorption onset threshold is around 600 nm; therefore, light absorption by QDs is negligible for longer wavelength illumination at 660 nm.…”
mentioning
confidence: 79%
“…In recent years, alongside the rapidly growing of QDs based advanced photodetectors, the QD materials have emerged as a novel candidate for next-generation optoelectronic devices, that is, photonic memories, [235][236][237][238][239][240] optically stimulated synaptic devices, [241,242] etc. As the quasi-0D materials, QDs including CsPbBr 3 , [243] CdSe@ZnSe core-shell, [239] CdSe/ZnS coreshell, [109,244] CdSe, [235,245] as well as, Gr [246,247] are usually fabricated by the solution processing methods at a considerably low cost, and they can be directly used to build optoelectronic synapses. When compared to other nanostructures, [62] QDs typically show remarkable photoconductive improvements due to the phonon bottleneck effect and surface traps, which extend the carrier lifetime.…”
Section: Directly Built On Qd Materialsmentioning
confidence: 99%
“…70 For molecules with nonzero net spin (having unpaired electrons), the strong electron−electron interactions lead to zero-bias conduction enhancement because of the formation of an electronic screening cloud called a Kondo cloud (see Figures 2g and 2h). Thus, spin-dependent charge transport phenomena provide a controllable tool to alter the conductance of molecular circuits, implying huge applications in spintronic devices, 26 such as chirality-induced spin selectivity (CISS) based spin filters, 71,72 single-molecular magnets, 68 spin valves, 73 molecular memory devices, 68 etc.…”
Section: ■ Quantum Effects At Nanoscalementioning
confidence: 99%