“…In recent years, alongside the rapidly growing of QDs based advanced photodetectors, the QD materials have emerged as a novel candidate for next-generation optoelectronic devices, that is, photonic memories, [235][236][237][238][239][240] optically stimulated synaptic devices, [241,242] etc. As the quasi-0D materials, QDs including CsPbBr 3 , [243] CdSe@ZnSe core-shell, [239] CdSe/ZnS coreshell, [109,244] CdSe, [235,245] as well as, Gr [246,247] are usually fabricated by the solution processing methods at a considerably low cost, and they can be directly used to build optoelectronic synapses. When compared to other nanostructures, [62] QDs typically show remarkable photoconductive improvements due to the phonon bottleneck effect and surface traps, which extend the carrier lifetime.…”