Optical parameters of diode lasers based on an InAsSb/InAsSbP heterostructure

Astakhova, A. P.; Bezyazychnaya, T. V.; Буров, Л. И.; Gorbatsevich, A. S.; Ryabtsev, A. N.; Ryabtsev, G. I.; Щемелев, М. А.; Yakovlev, Yu. P.

doi:10.1134/s1063782608020206

Cited by 5 publications

(3 citation statements)

References 6 publications

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“…[24] (note that there, in contrast to the present work, double heterostructures were studied). Stimulated emission from structures with InAsSb-based active layer so far has been observed only in specially designed laser structures: in particular, one can mention strip-waveguide lasers based on double heterostructures with high symmetrical barriers [25][26][27]. In our case, resonators were not fabricated, nor were the cleft edges of the LED chips mirror-like.…”

Section: Discussionmentioning

confidence: 86%

Luminescence of II–VI and III–V nanostructures

Mynbaev

Shilyaev

Semakova

et al. 2017

Opto-Electronics Review

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Photoluminescence of HgCdTe epitaxial films and nanostructures and electroluminescence of InAs(Sb,P) light-emitting diode (LED) nanoheterostructures were studied. For HgCdTe-based structures, the presence of compositional fluctuations, which localized charge carriers, was established. A model, which described the effect of the fluctuations on the rate of the radiative recombination, the shape of luminescence spectra and the position of their peaks, was shown to describe experimental photoluminescence data quite reasonably. For InAs(Sb,P) LED nanoheterostructures, at low temperatures (4.2-100 K) stimulated emission was observed. This effect disappeared with the temperature increasing due to the resonant 'switch-on' of the Auger process involving transition of a hole to the spin-orbit-splitted band. Influence of other Auger processes on the emissive properties of the nanoheterostructures was also observed. Prospects of employing II-VI and III-V nanostructures in light-emitting devices operating in the midinfrared part of the spectrum are discussed.

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Section: Discussionmentioning

confidence: 86%

Luminescence of II–VI and III–V nanostructures

Mynbaev

Shilyaev

Semakova

et al. 2017

Opto-Electronics Review

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“…It was shown for lasers based on the double heterostructure InAsSb/InAsSbP [10] that the rate of radiationless recombination is dominant (>90% at the generation threshold). Therefore, the continuous equation for nonequilibrium charge-carrier concentration N [5] is supplemented by terms that take into account radiationless recombination:…”

mentioning

confidence: 98%

“…The spectrum amplification coefficient g(N, ω χ ) was calculated for a LD spectroscopic model without selection rules for the wave vector [7][8][9] that, as shown previously [8], gives the best agreement of the calculated values with the experimental ones. The parameters for calculating the spectral functions [10] and the quantity δn/δN [3] were taken from the literature.…”

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confidence: 99%

Calculation of spatial intensity distribution of InAsSb/InAsSbP laser diode emission

et al. 2008

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The spatial distribution of emission intensity in the active layer of a laser diode (LD) based on an InAsSb/InAsSbP heterostructure (generation wavelength λ gen ~ 3.3 μm) is obtained for various stripe widths w by means of numerical solution of the wave equation in the 2D approximation taking into account the refractive index nonlinearity. It has been shown that the special distribution of emission intensity becomes strongly inhomogeneous at w values exceeding 9-10 μm, which results in the appearance of additional maxima in the far-field pattern. Calculated far-field patterns in the active layer plane of the LD agree with corresponding experimental data.

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