Optical-phonon confinement and scattering in wurtzite heterostructures

Lee, B. C.; Stroscio, Michael A.; Dutta, Mitra

doi:10.1103/physrevb.58.4860

Cited by 155 publications

(128 citation statements)

References 12 publications

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“…Raman scattering studies of InN films grown on (0001) sapphire substrates via metalorganic vapor phase epitaxy were first reported by Kwon et al [33].…”

Section: Wurtzite and Zincblende Structure Of A1n And Innmentioning

confidence: 99%

“…x N [23,31]. Of special significance for the nitride-based wurtzite structures is the decay of the LO phonon modes which dominates in the polar-optical-phonon carrier interaction in many high speed optoelectronic devices [32][33]. The accepted model, known as Klemens' model, of LO phonon decay in cubic structure materials has been established to occur via the annihilation of the LO Raman phonon (of frequency co LO ) and the creation of two LA phonons (each of frequency co LA ) at the zone edge [20].…”

Section: ^=1 (2)mentioning

confidence: 99%

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Phonons on Quantum Epitaxial Structures Based on Wide Band Gap Materials

Dutta¹

1998

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Public «port™ burden for ihii collection of erlormetion a estmatad to average 1 hour per response, including the lime lor warning «struct«™, searching ousting data sources, gathermf| ancminting the data needed, and comple rng arc1 rtirwmng the collection of «formation. Sand commtnti regarding thii burden tatimate or any other aspect of this eduction of mlormalion. «eroding suggestions for raducing this burden, to Washington Headquarters Seros. Dmioraie to-imormation Operations and Reports. 1215 Jefferson Dans rughway. Suite 1204. Arlington. VA 222024302, and to the Office of Management and Budget. Paperwork Reduction Project 10704-0188), Washington, DC 20503. AGENCY USE ONLY (Leave blank)2. REPORT DATE 30 December 1998 REPORT TYPE AND DATES COVERED FINAL March 1997-31 August 2000 TITLE AND SUBTITLE Phonons on Quantum Epitaxial Structures Based on Wide Band Gap Materials AUTHORIS) Mitra Dutta PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES)North Carolina State University, Raleigh, NC 27695-8202 SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES)U SUPPLEMENTARY NOTESThe views, opinions and/or finding contained in this report are those of the author(s) and should not be construed as an official Department of Army position, policy of decision, unless so designated buy other documentation. 12a. DISTRIBUTION AVAILABILITY STATEMENTApproved for public release; distribution unlimited. 12b. DISTRIBUTION CODE ABSTRACT (Maximum 200 words/Raman scattering studies were performed on III-V Nitride materials including binary crystals, ternary alloys, and superlattices of GaN/AIN and GaN/AlGaN. Our results show that in AlGaN alloys the asymmetric behavior of the E21ineshape arises from random disorder; the E2 phonon does not follow a one mode behavior and the AlGaN films on SiC are under small tensile stress. In the InGaN too the Al mode shows a one mode behavior while two mode behavior may be possible for E2. Possible mode mixing takes place. Evidence of inhomogeneities and spinodal decomposition is seen in these films. Phonon lifetime measurements are made in the binary crystals and in every case we see evidence of two lifetime regions. In the superlattices we see anomalous low temperature behavior that is consistent with a density of states of spectral distribution that is due to the roughness of the interfaces and which agrees with TEM measurements. Finally preliminary measurements demonstrate strong interface phonons in the GaN/AIN superlattices which give good agreement with theory. SUBJECT TERMSWide band gap semiconductors, phonons and their lifetimes. NUMBER OF PAGES 087 Phonons on Quantum Epitaxial Structures Based on Wide Band Gap Materials PrefaceRaman scattering studies were performed on III-V Nitride materials including binary crystals, ternary alloys, and superlattices of GaN/AIN and GaN/AlGaN. Our results show that in AlGaN alloys the asymmetric behavior of the E21ineshape arises from random disorder; the E2 phonon does not follow a one mode behavior and the AlGaN films on SiC are under small tensile stress. In...

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“…Raman scattering studies of InN films grown on (0001) sapphire substrates via metalorganic vapor phase epitaxy were first reported by Kwon et al [33].…”

Section: Wurtzite and Zincblende Structure Of A1n And Innmentioning

confidence: 99%

Section: ^=1 (2)mentioning

confidence: 99%

Phonons on Quantum Epitaxial Structures Based on Wide Band Gap Materials

Dutta¹

1998

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“…Good knowledge of the vibration properties of this material is essential to understand transport properties and phonon interaction with the free carriers, both of which have great impact on optoelectronic device performance [10]. In polar semiconductors, carriers already excited to the conduction band relax toward their ground state mainly by Fröhlich interaction with the longitudinal optical phonons [11] [12] [13]. Thus, the dynamics of the phonon population strongly affects the performance of high speed optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Temperature-Dependent Raman Scattering of ZnSe Nanowires

Shi¹,

Wang²,

Wang³

et al. 2016

AMPC

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We present a Raman scattering study of ZnSe over a temperature range from 80 to 580 K. Both of TO and LO modes of ZnSe nanowires are observed a red-shift with elevating temperature, and its intrinsic broadening is larger than that of bulk counterpart. The opticalphonon lifetime of ZnSe nanowires are longer than that of nanoparticles but shorter than that of bulk, which can be attributed to the different surface to volume ratios. Some overtones and multi-phonon peaks are also observed at high temperature due to the larger wave vector q. The 2TA 1 (K) and multi-phonon peaks TA(X,K) + LA(X) appears at the temperature that is higher than room temperature. The intensity of overtones acoustics TA(L) elevates with increasing temperature while the surface mode disappears at temperature higher than 296 K. Detailed investigations on temperature-dependent phonon characteristics provide essential component for understanding confined phonons effects at small scale.

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“…In a recent paper Mora-Ramos et al [5] calculated the interfacepolar-optical-phonon-limited mobility for electrons in the conduction band of AlGaN/GaN single heterostructures using the model and interaction Hamiltonian presented in [1]. The outcome of their calculation revealed values for the room temperature mobility well below the most of the experimental reports in such kind of systems.…”

Section: Introductionmentioning

confidence: 99%

“…The description of the long wavelength polar optical modes in nitridebased heterostructures with wurtzite structure has been put forward since the mid nineties within a formalism that combines the socalled dielectric continuum model (DCM) together with the Loudon's uniaxial model [1]. Studies on the subject have continued until very recently [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

The Electrostatic Potential Associated to Interface Phonon Modes in Nitride Single Heterostructures

Pérez‐Álvarez¹,

Velasco²

2008

PIER Letters

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Abstract-The electrostatic potential associated to the interface oscillation modes in nitride-based heterostructure is calculated with the use of a complete phenomenological electroelastic continuum approach for the long wave optical oscillations, and the Surface Green Function Matching technique. The crystalline symmetries of zincblende andisotropically averaged -wurtzite are both considered in the sets of input bulk frequencies and dielectric constants.

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Optical-phonon confinement and scattering in wurtzite heterostructures

Cited by 155 publications

References 12 publications

Phonons on Quantum Epitaxial Structures Based on Wide Band Gap Materials

Phonons on Quantum Epitaxial Structures Based on Wide Band Gap Materials

Temperature-Dependent Raman Scattering of ZnSe Nanowires

The Electrostatic Potential Associated to Interface Phonon Modes in Nitride Single Heterostructures

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