1984
DOI: 10.1002/pssb.2221210209
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Optical Phonons in Amorphous Silicon Oxides. II. Calculation of Phonon Spectra and Interpretation of the IR Transmission of SiOx

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Cited by 64 publications
(27 citation statements)
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“…Two broad features develop with growing film thickness. The stronger one at 982 cm −1 is assigned to the asymmetric stretching mode of the oxygen atom in a SiOSi bridge against the Si‐neighbour atoms 8, 25–29. The much weaker structure at ∼713 cm −1 corresponds to the Si stretching mode, a mode with dominating Si displacement 29, sometimes called ‘bending’ mode in the literature.…”
Section: Resultsmentioning
confidence: 97%
See 1 more Smart Citation
“…Two broad features develop with growing film thickness. The stronger one at 982 cm −1 is assigned to the asymmetric stretching mode of the oxygen atom in a SiOSi bridge against the Si‐neighbour atoms 8, 25–29. The much weaker structure at ∼713 cm −1 corresponds to the Si stretching mode, a mode with dominating Si displacement 29, sometimes called ‘bending’ mode in the literature.…”
Section: Resultsmentioning
confidence: 97%
“…The stronger one at 982 cm −1 is assigned to the asymmetric stretching mode of the oxygen atom in a SiOSi bridge against the Si‐neighbour atoms 8, 25–29. The much weaker structure at ∼713 cm −1 corresponds to the Si stretching mode, a mode with dominating Si displacement 29, sometimes called ‘bending’ mode in the literature. Beyond 1 nm, these peak positions do not shift with film thickness anymore and, accordingly, the IR dielectric function of the evaporated film already resembles that of bulk SiO 12, 14, 30.…”
Section: Resultsmentioning
confidence: 97%
“…2.3). As for the 456 cm −1 SiO 2 oscillator, a larger damping constant than that corresponding to the Palik data is justifyable also on the basis of the spectra published by Lehmann, Schumann & Hübner (1984). These authors studied the transmittance of thin SiO x films (with x<2) and found a strong broadening of the 20-21 µm band with decreasing x.…”
Section: Silicon Carbide Silicon Dioxidementioning
confidence: 87%
“…SiO 2 has an absorption feature very near the c-BN absorption peak at 1072 cm Ϫ1 . 22 An improper account of the presence of SiO 2 may lead to an overprediction or misinterpretation of the amount of c-BN present in the film. It may be desirable to use IR reflectance spectroscopy at low grazing angles, rather than near-normal IR transmittance spectroscopy, so as to be more sensitive to the BN layer and less sensitive to SiO 2 that may be present at the interface.…”
mentioning
confidence: 99%