Optical Properties and Applications of Silicon Carbide in Astrophysics

Pitman, K. M.; Speck, A. K.; Hofmeister, Anne M.; Corman, Adrian

doi:10.5772/24352

Cited by 4 publications

(1 citation statement)

References 110 publications

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“…For UV light with wavelength of 365 nm at a temperature of 25°C, the reflectance of α-Al 2 O 3 and SiC is ~8% and ~20%, respectively. [21][22][23] In addition, the absorption coefficients of α-Al 2 O 3 and SiC are ~ 10 -2 cm -1 and ~500 cm -1 , respectively. [21][22][23][24] Therefore, SiC particles and Al 2 O 3 appear black and white in the UV images, respectively, because the difference in absorption is much higher than that in reflectance.…”

Section: Evaluation Of As-fabricated Micro-speckle Patternsmentioning

confidence: 99%

Optical imaging of surface strain distribution up to 1500°C: Development of micro‐speckle pattern

Arai

Inoue

Kakisawa

2021

Int J Ceramic Engine & Sci

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Micro-speckle patterns were fabricated using α-Al 2 O 3 and SiC micro-particles for in-plane strain distribution measurement at temperatures up to 1500 ℃ using an ultraviolet high temperature observation system (UV-HTOS) combined with a digital image correlation (DIC) technique. The experimental results showed that the measured mean surface strains of α-Al 2 O 3 were in good agreement with the calculated values obtained from thermal expansion coefficient and temperature difference. The proposed speckle pattern could be used for strain distribution measurement without degradation even after heating up to 1500 ℃. The results also demonstrated that the pattern fabricated in this study is effective to understand the heterogeneous deformation mechanism in composite materials applied in high temperature structural components.

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Section: Evaluation Of As-fabricated Micro-speckle Patternsmentioning

confidence: 99%

Optical imaging of surface strain distribution up to 1500°C: Development of micro‐speckle pattern

Arai

Inoue

Kakisawa

2021

Int J Ceramic Engine & Sci

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Influence of In-Situ Annealing of Si-Rich Silicon Carbide Thin Films

Baskar

Nalini

2019

JSST

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Si-rich Silicon carbide thin films have grown popularity in the past decade for various opto-electronic applications. Post processing of these thin films at temperature higher than 1000oC usually lead to phase transformations to form Si nanoclusters embedded in amorphous SiC deposited by sputtering on thin films. However, the processing technique is crucial to avoid contaminants, and obtain good quality films. Therefore, a novel in-situ annealing approach within the deposition chamber is carried out at temperatures lower than usual. The influence of in-situ annealing on the material property is meticulously studied by means of Spectroscopic Ellipsometry (SE), Diffused Reflectance Spectroscopy (DRS), and Fourier Transform Infrared Spectroscopy (FTIR). In SE, the spectra are fitted using various models; the refractive index values confirm the Si-richness of the film. The band gap (2.5 to 1.5 eV) is extracted from UV spectra using Tauc plot, which confirms the coexistence of the multiphase structure with the possibility of having Si-NC with different dimensions. The results obtained are promising for optoelectronic device applications.

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Evolution of carbon particles from the stage of asymptotic giant branch stars to planetary nebulae: observations, experiments, and theory

Murga

2023

Phys. Usp.

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Optical Properties and Applications of Silicon Carbide in Astrophysics

Cited by 4 publications

References 110 publications

Optical imaging of surface strain distribution up to 1500°C: Development of micro‐speckle pattern

Optical imaging of surface strain distribution up to 1500°C: Development of micro‐speckle pattern

Influence of In-Situ Annealing of Si-Rich Silicon Carbide Thin Films

Evolution of carbon particles from the stage of asymptotic giant branch stars to planetary nebulae: observations, experiments, and theory

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