Elemental doping has already been
established to be one of the
most effective approaches for band-gap engineering and controlled
material response for improved photocatalytic activity. Herein atomically
thin ZnIn2S4 (ZIS) nanosheets were doped with
O and N separately, and the effects of doping were spectroscopically
investigated for photocatalytic H2 evolution. Steady-state
photoluminescence studies revealed an enhanced charge-carrier population
in the doped systems along with a defect-state-induced broad peak
in the red region of the spectra. Transient absorption (TA) spectroscopy
demonstrated that the conduction-band-edge electrons are transferred
on an ultrafast time scale to the inter-band-gap defect states. TA
analysis suggests that O and N doping contributes to the defect state
concentration and ensures an enhanced photocatalytic activity of the
system. This detailed spectroscopic analysis uncovers the role of
inter-band-gap defect states in the photocatalytic activity of ZIS
and will open new avenues for the construction of nanosheet-based
optical devices.