Optical properties and ferroelectric engineering of vapor-transport-equilibrated, near-stoichiometric lithium tantalate for frequency conversion

Hum, David S.; Route, R.; Miller, Gregory D.; Kondilenko, V. P.; Alexandrovski, A.; Huang, Jianming; Urbánek, Karel; Byer, Robert L.; Fejer, M. M.

doi:10.1063/1.2723867

Cited by 57 publications

(38 citation statements)

References 38 publications

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“…The annealing of congruent lithium tantalate (CLT) wafers with prereacted Li-rich powder of 70% LiO 2 and 30% Ta 2 O 5 during 100 h at 1100 C was used during VTE process. 34 In our experiments, we used two different types of electrodes: (1) liquid electrodes based on saturated aqueous solution of LiCl; (2) solid state metal electrodes (100-nm-thick Ni) or conductive transparent oxide (200-nm-thick In 2 O 3 :Sn (ITO)) deposited by DC ion plasma sputtering. The circular solid state electrodes (2-3 mm in diameter) of the same material were deposited on both polar surfaces.…”

Section: Methodsmentioning

confidence: 99%

“…[33][34][35] It belongs to the family of lithium niobate (LN) and lithium tantalate (LT) crystals, which are the most popular nonlinear-optical ferroelectric materials. 36 This uniaxial ferroelectric demonstrates the lowest coercive field within all representatives of LN and LT family (about 200 times lower than in CLN).…”

Section: Model Of the Fatigue Process Caused By Growth Of The Fromentioning

confidence: 99%

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Fatigue effect in ferroelectric crystals: Growth of the frozen domains

Shur

Ахматханов

Батурин

2012

Journal of Applied Physics

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The model of the fatigue effect during cyclic switching caused by growth of the frozen domain area with charged domain walls has been proposed. It was claimed on the basis of the previous experimental results that for switching in increasing field the frozen domain area started to grow at the given sub-threshold field value and stopped at the threshold field. The influence of the shape and frequency of the field pulses used for cyclic switching has been considered. The uniaxial ferroelectric stoichiometric lithium tantalate single crystals produced by vapor transport equilibration with record low value of coercive field have been chosen as a model material for experimental verification of the model. The formation of the charged domain walls as a result of cyclic switching has been revealed by analysis of the domain images obtained by optical and Raman confocal microscopy. It has been shown that the fatigue degree is equal to the fraction of the frozen domain area. The experimental dependence of the switched charge on the cycle number has been successfully fitted by modified Kolmogorov-Avrami formula. The experimentally observed frequency independence of fatigue profile for rectangular pulses and frequency dependence for triangular pulses has been explained by proposed model.

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Section: Methodsmentioning

confidence: 99%

Section: Model Of the Fatigue Process Caused By Growth Of The Fromentioning

confidence: 99%

Fatigue effect in ferroelectric crystals: Growth of the frozen domains

Shur

Ахматханов

Батурин

2012

Journal of Applied Physics

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“…13 Such improved optical and ferroelectric properties make VTE-LT crystals very promising for production of nonlinear optical devices with tailored domain structure. 14 The polarization reversal process was studied in VTE-LT crystals by integral methods only. 12,14 The activation-type field dependence of the switching time was revealed.…”

Section: Introductionmentioning

confidence: 99%

“…14 The polarization reversal process was studied in VTE-LT crystals by integral methods only. 12,14 The activation-type field dependence of the switching time was revealed.…”

Section: Introductionmentioning

confidence: 99%

Polarization reversal and jump-like domain wall motion in stoichiometric LiTaO3 produced by vapor transport equilibration

Shur

Ахматханов

Батурин

et al. 2012

Journal of Applied Physics

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The polarization reversal and domain structure evolution has been studied in stoichiometric lithium tantalate prepared by vapor transport equilibration process. The first in situ visualization of domain kinetics has demonstrated the jump-like motion of few strictly oriented plane domain walls, which leads to short isolated current pulses in the switching current data. The proposed model of jump-like domain wall motion caused by interaction with pinning centers representing the areas with increased value of the threshold field is based on the effect of retardation of bulk screening. The derived formulas were applied successfully for analysis of the field dependence of the total switching time. The durations of wall jumps and wall stays (rest times) extracted from the switching current data are analyzed separately. The deceleration of the wall motion velocity during jump is controlled by the trail of residual depolarization field produced by bound charges and screening charges in the area behind the wall. The duration of the rest time is governed by the bulk screening of residual depolarization field. The value of Hurst exponent 0.75 obtained by fractal analysis of the switching current data has confirmed the essential influence of prehistory on the domain wall motion. The measurements of the coercive field by switching in bipolar triangular pulses in wide range of the field ramp rate have allowed us to extract the record low value of coercive field 60 V/mm for quasi-static polarization reversal.

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“…[3][4][5][6][7] However, it is known that the lower defect density, and consequently less pinning sites, in conjunction with the reduced coercive field of this material, may cause unstable domain structures. 8 In fact, it has been observed that even moderate heat treatment can lead to domain backswitching in NSLT. 9 The standard technique to study domain structures for periodically poled ferroelectrics is by using domain-selective etchants, mostly based on hydrofluoric acid (HF).…”

Section: Introductionmentioning

confidence: 99%