Optical properties and residual stress in aluminum nitride films prepared by alternating-current dual reactive magnetron sputtering

Tang, Chien-Jen; Jaing, Cheng–Chung; Lee, Kun-Hsien; Lee, Cheng-Chung

doi:10.1364/ao.50.001945

Cited by 2 publications

(1 citation statement)

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“…The most compelling CMOS compatible modulator devices presented have used direct electrooptic modulation of aluminum nitride (AlN) waveguiding layers [8][9][10]. Aluminum nitride can be used in CMOS fabrication with piezoelectric and electro-optic properties approximating single crystal films when grown by physical vapor deposition (PVD) [11]; however, these AlN films suffer from high optical losses at short wavelengths due to Rayleigh scattering arising from the polycrystallinity of aluminum nitride grown by PVD [10,12,13]. When applied to electro-optic modulation applications, this wavelength-dependent loss, combined with the large LVπ characteristic of aluminum nitride, results in fairly poor performance at near-visible wavelengths and shorter.…”

Section: Introductionmentioning

confidence: 99%

CMOS-compatible, piezo-optomechanically tunable photonics for visible wavelengths and cryogenic temperatures

et al. 2019

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We demonstrate a platform for phase and amplitude modulation in silicon nitride photonic integrated circuits via piezo-optomechanical coupling using tightly mechanically coupled aluminum nitride actuators. The platform, fabricated in a CMOS foundry, enables scalable active photonic integrated circuits for visible wavelengths, and the piezoelectric actuation functions without performance degradation down to cryogenic temperatures. As an example of the potential of the platform, we demonstrate a compact (~40 μm diameter) silicon nitride ring resonator modulator operating at 780 nm with intrinsic quality factors in excess of 1.5 million, >10 dB change in extinction ratio with 2 V applied, a switching time less than 4 ns, and a switching energy of 0.5 pJ/bit. We characterize the exemplary device at room temperature and 7 K. At 7 K, the device obtains a resistance of approximately 2x10 13 Ohms, allowing it to operate with sub-picowatt electrical power dissipation. We further demonstrate a Mach-Zehnder modulator constructed in the same platform with piezoelectrically tunable phase shifting arms, with 750 ns switching time constant and 20 nW steady-state power dissipation at room temperature.

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