Optical properties near the band gap on hexagonal and cubic GaN

Okumura, Hajime; Yoshida, Sadafumi; Okahisa, Takuji

doi:10.1063/1.111383

Cited by 88 publications

(24 citation statements)

References 12 publications

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“…In Table 2, we summarized the band gap energies for the studied materials. Our results were parallel to the theoretical [20,21] and experimental [ [22][23][24][25] values. The band gap energy of GaAs 1−y N y shows unexpected and drastic decrease with increasing N concentration in low N composition region and shows a nonlinear tendency for whole N concentration.…”

Section: Electronic Propertiessupporting

confidence: 91%

Structural and electronic properties of Ga1−xInx As1−yNy quaternary semiconductor alloy on GaAs substrate

Aslan

Yalcin

Ustundag

2012

Journal of Alloys and Compounds

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Section: Electronic Propertiessupporting

confidence: 91%

Structural and electronic properties of Ga1−xInx As1−yNy quaternary semiconductor alloy on GaAs substrate

Aslan

Yalcin

Ustundag

2012

Journal of Alloys and Compounds

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“…In Table 2, we summarized the band gap energies for the studied materials. Our results are parallel to the theoretical [12], [19] and experimental [20][21][22][23] values. The band gap energy of GaAs 1-x N x shows unexpected and drastic decrease with increasing N concentration in low N composition region and shows a nonlinear tendency for whole N concentration.…”

Section: Electronic Propertiessupporting

confidence: 78%

A study on structural and electronic properties of GaAs1-xNx and GaAs1-xBix alloys

Aslan

Yalcin

2016

IJPR

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We have performed first principles method to investigate structural and electronic properties of GaAs 1-x N x and GaAs 1-x Bi x ternary semiconductor alloy using Density Functional Theory and pseudo potential method within the Generalized Gradient Approximations and Local Density Approximation. The Zinc-Blende phase is found stable for GaAsN and GaAsBi alloys. In this study we investigate the both bowing parameters changing with Bismuth concentration in GaAsBi and Nitrogen concentration in GaAsN alloys. By using the bowing parameter of GaAsBi and GaAsN alloys we obtained the bandgap energies for all x concentrations (0 < x < 1) and lattice constant of both alloys which are important for wide range device application. For studied materials, lattice parameters and band gap energies are compared with available theoretical and experimental works.

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“…Cubic GaN was grown on GaAs (001) substrates and hexagonal GaN on (111) substrates. Okumura et al 16 observed carbon contamination of MBE grown GaN using DMHy.…”

Section: Introductionmentioning

confidence: 98%

Pyrolysis of 1,1 dimethylhydrazine for OMVPE growth

Lee

Stringfellow

1999

J. Electron. Mater.

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A key requirement for the growth of the wide bandgap nitrides, GaN and InGaN, is providing a sufficient supply of atomic nitrogen from the vapor phase during growth. In order to prevent a high concentration of nitrogen vacancies, especially for GaInN, one strategy is to use a precursor with a low pyrolysis temperature, thus yielding a high concentration of atomic nitrogen in the vapor phase. 1,1 dimethylhydrazine (DMHy), with an appropriate vapor pressure of 157 Torr at 25°C and a low pyrolysis temperature (T 50~4 20°C), is a promising candidate to replace NH 3 , the most common nitrogen source. The pyrolysis studies of DMHy suggest the rate limiting step for decomposition is a heterogeneous, unimolecular process that is independent of both input concentration and ambient. Radical reactions are also involved as indicated by the products. In He they include CH 4 , NH 3 , N 2 , H 2 , HCN, C 2 H 6 , CH 3 NCH 2 , and (CH 3 ) 2 NH. Experiments on the copyrolysis of DMHy and trimethylgallium show that an adduct is formed at room temperature followed by CH 4 elimination, presumably forming (CH 3 ) 2 GaNHN(CH 3 ) 2 . At higher temperatures, the products indicate that the covalent Ga-N bond doesn't dissociate during pyrolysis.

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Optical properties near the band gap on hexagonal and cubic GaN

Cited by 88 publications

References 12 publications

Structural and electronic properties of Ga1−xInx As1−yNy quaternary semiconductor alloy on GaAs substrate

Structural and electronic properties of Ga1−xInx As1−yNy quaternary semiconductor alloy on GaAs substrate

<p class="IJOPCMTitle">A study on structural and electronic properties of GaAs<sub>1-x</sub>N<sub>x </sub>and GaAs<sub>1-x</sub>Bi<sub>x</sub> alloys</p>

Pyrolysis of 1,1 dimethylhydrazine for OMVPE growth

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