Optical properties of amorphous As–Se and Ge–As–Se thin films

Tichý, L.; Tichá, H.; Nagels, P.; Callaerts, R.; Mertens, R.; Vlček, Miroslav

doi:10.1016/s0167-577x(98)00227-4

Cited by 184 publications

(35 citation statements)

References 22 publications

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“…1). With decreasing temperature the absorption edge shifts towards shorter wavelengths reflecting well known gap widening, in good accordance with literature [10,11]. In the inset one can see the temperatures used.…”

Section: Resultssupporting

confidence: 89%

Low-temperature photo-induced mass transfer in thin As20Se80 amorphous films

et al. 2015

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We have detected that surface relief gratings (SRG) in amorphous chalcogenide films As 20 Se 80 can be optically recorded at low temperature, such as 77 K. A diffusion mechanism of photo-induced (PI) mass transport is proposed. A driving force of PI mass transport is a lateral steady state electric field induced by light interference. The kinetics of PI SRG growth depends on temperature due to temperature dependence of PI diffusion coefficients and concentration of radiation defects. By comparison of low temperature kinetics with that at 300 K we estimated diffusion activation energy, which turned out 0.09 eV. We present a model that explains low diffusion activation energy.

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Section: Resultssupporting

confidence: 89%

Low-temperature photo-induced mass transfer in thin As20Se80 amorphous films

et al. 2015

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“…Other properties, specifically their extended optical transmission window from the visible to the far infrared (up to 20 µm), their high refractive index (usually between 2 and 3) or their nonlinear optical properties make them a class of optical materials with growing interest [15,16]. The fabrication of chalcogenide thin films is usually carried out using chemical vapor deposition [17], thermal evaporation [18,19], pulsed laser deposition, or radio-frequency sputtering [20,21]. Since the thin films parameters, i.e.…”

Section: Introductionmentioning

confidence: 99%

RF sputtered amorphous chalcogenide thin films for surface enhanced infrared absorption spectroscopy

Verger¹,

Nazabal²,

Colas³

et al. 2013

Opt. Mater. Express

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Abstract:The primary objective of this study is the development of transparent thin film materials in the IR enabling strong infrared absorption of organic compounds in the vicinity of metal nanoparticles by the surface plasmon effect. For developing these optical micro-sensors, heterostructures combining gold nanoparticles and chalcogenide planar waveguides are fabricated and adequately characterized. Single As 2 S 3 and Ge 25 Sb 10 Se 65 amorphous chalcogenide thin films are prepared by radiofrequency magnetron sputtering. For the fabrication of gold nanoparticles on a chalcogenide planar waveguide, direct current sputtering is employed. Fabricated single layers or hetero-structures are characterized using various techniques to investigate the influence of deposition parameters. The nanoparticles of gold are functionalized by a self-assembled monolayer of 4-nitrothiophenol. Finally, the surface enhanced infrared absorption spectra of 4-nitrothiophenol self-assembled on fabricated Au/Ge-Sb-Se thin films hetero-structures are measured and analyzed. This optical component presents a ~24 enhancement factor for the detection of NO 2 symmetric stretching vibration band of 4-nitrothiophenol at 1336 cm −1 . 232-239 (1999). 19. L. Tichý, H. Ticha, P. Nagels, R. Callaerts, R. Mertens, and M. Vlcek, "Optical properties of amorphous As-Se and Ge-As-Se thin films," Mater. Lett. 39(2), 122-128 (1999). 20. J. Charrier, M. L. Anne, H. Lhermite, V. Nazabal, J. P. Guin, F. Charpentier, T. Jouan, F. Henrio, D. Bosc, and J. L. Adam, "Sulphide GaxGe25-xSb10S65(x=0,5) sputtered films: Fabrication and optical characterizations of planar and rib optical waveguides," J. Appl.

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“…The dispersion parameters and the static dielectric constant (ε ∞ = n 2 at hν → 0) for our as-deposited TTIF can be calculated by plotting (n 2 -1) Finally, the generalized Miller's rule [30][31][32],…”

Section: Resultsmentioning

confidence: 99%

“…In Eq. (11), A denotes a parameter which is assumed to be frequency independent and nearly the same for all materials (A  1.710 −10 esu [30][31][32]). Issuing from our experimental data, we have obtained…”

Section: Resultsmentioning

confidence: 99%

Structural and optical characterizations of thin organic films of thioindigo

Khusayfan¹,

El-Nahass²

2016

Ukr. J. Phys. Opt.

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Abstract. We report on the structural and optical properties of the nanorods available in thermally evaporated thin films of thioindigo (TI). The structural features are investigated using X-ray diffraction, transmission electron microscopy and Fourier-transform infrared spectroscopy techniques. The optical constants of asdeposited thin TI films are determined in the wavelength region 200-2500 nm, using spectrophotometric measurements for the nearly normal light incidence. The type of optical transitions for the TI films is ascertained from the dispersion of their absorption coefficient. The real part of the refractive index in the region of optical transparency is analyzed basing on single-oscillator and Drude models. The thirdorder nonlinear susceptibility is obtained from the single-oscillator model and the Miller's rule.

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Optical properties of amorphous As–Se and Ge–As–Se thin films

Cited by 184 publications

References 22 publications

Low-temperature photo-induced mass transfer in thin As20Se80 amorphous films

Low-temperature photo-induced mass transfer in thin As20Se80 amorphous films

RF sputtered amorphous chalcogenide thin films for surface enhanced infrared absorption spectroscopy

Structural and optical characterizations of thin organic films of thioindigo

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