Optical properties of Co-doped ZnSe thin films synthesized by pulsed laser deposition

Li, Shufeng; Wang, Li; Su, Xueqiong; Pan, Yong; Gao, Dongwen; Han, Xiaowei

doi:10.1016/j.tsf.2019.137599

Cited by 15 publications

(3 citation statements)

References 42 publications

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“…This behaviour may be related to the impurity-type scattering sites as a result of the enhancement of the number of atoms inside the interstitial network with an increase in Cu concentration. In other words, this is most likely connected to the alteration of the local field and ion polarizability into ZnSe lattice with the increasing Cu ratio in investigated films [7,54]. Furthermore, the parameter of extinction coefficient,k of pure ZnSe and Cu-doped ZnSe thin films can be calculated based on the next eq.…”

Section: Cu Concentrationmentioning

confidence: 99%

Effect of Cu ratios dopant on ZnSe thin films structural and optical properties

Abdel-Salam,

Sabry,

Yousef

et al. 2023

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This study focused to prepare poly-crystalline (ZnSe)1-x Cux thin films, where x values vary from 0 to 0.1 %. the effect of Cu ratios dopant on structural, phases and optical properties has been investigated. As prepared thin films were deposited onto a cleaning glass substrate under high vacuum conditions (10-7 mbr) at room temperature using the “ evaporation technique”. The analysis results according to data of the X-ray diffraction technique of all films refer to the growth polycrystalline with hexagonal wurtzite structure of Zn-Se with no presence of any further phases. The changes in numerous parameters such as volume of the unit cell, atomic packing factor, dislocation density, lattice constant and bond length with the Cu ratio were estimated and described. As well, the crystallite sizes,D, the lattice micro-strain,ε and dislocation density,δ have been calculated the results evidence that the micro-structural parameters enhancement with increment Cu atoms. On the other hand, the optical parameters of the as-synthesized films (ZnSe)1-xCux (0 ≤ x ≤ 0.1) were performed utilizing “UV–V is spectro -photometer” with a wavelength range of 300 to 2400 nm. The results show that as the Cu ratio increases, the absorption edge shifts to a higher wavelength and the optical band gap, Eg opt decreases from 2.63 eV to 2.52 eV. Finally, the behaviour of the optical constant parameters as real,εr/ imaginary, εi parts, dissipation factor,tan δ, volume/surface energy loss functions and dispersion parameters were shown to depend on the variation of the Cu ratio and wavelengths.

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Section: Cu Concentrationmentioning

confidence: 99%

Effect of Cu ratios dopant on ZnSe thin films structural and optical properties

Abdel-Salam,

Sabry,

Yousef

et al. 2023

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“…Cobalt is a potential dopant material in the ZnSe system due to its relative ionic radii (Zn 2+ → 0.74 Å and Co 2+ → 0.75 Å). Co-doped zinc selenide (ZnSe: Co) thin films have been investigated by [20][21][22] for various applications. Their results showed enhancement in the properties of ZnSe thin films when cobalt ions were introduced into the structure of ZnSe thin films.…”

Section: Introductionmentioning

confidence: 99%

Properties of Electrosynthesized Cobalt Doped Zinc Selenide Thin Films Deposited at Varying Time

Ezenwaka

Okoli²,

Okereke

et al. 2021

Nanoarchitectonics

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Time optimized cobalt-doped zinc selenide thin films have been successfully electrodeposited on fluorine-doped tin oxide substrates. The films were deposited at the varying time of 1 min, 3 mins, and 5 mins respectively. Film thickness, optical, structural, electrical, and morphological properties of the deposited thin films were evaluated. Film thickness estimated using the gravimetric method increased from 294.35 nm to 399.62 nm as deposition time increased. Optical properties showed that the absorbance of the films ranged from 13.58% to 83.15% and was found to increase as deposition time increased. Transmittance ranged from 24.40% to 73.15% and was found to decrease as deposition time increased. The reflectance of the films was found to be low while the energy band gap ranged between 2.10 eV and 2.85 eV. Structural properties confirmed the deposition of ZnSe thin film with crystallite size values that fall between 14.68 nm and 18.60 nm. Dislocation density is ranged from 4.66 × 1015 lines/m2 to 2.97 × 1015 lines/m2 while microstrain ranged between 8.53 × 10-3 and 5.83 × 10-3. Crystallite sizes of the films were found to increase as deposition time increased while dislocation density and microstrain were found to decrease as deposition time increased. Electrical properties showed that the deposited films are semiconducting films with electrical resistivity values of 1.54 × 105 Ω cm-1.83 × 104 Ω cm and electrical conductivity values of 6.30 × 10-6 S/cm-5.47 × 10-5 S/cm. The micrograph of the films showed that the films were made up of nanoparticles and nanofibres of different dimensions. Energy-Dispersive X-Ray Spectroscopy (EDS) spectra of the films confirmed the presence of cobalt, zinc, and selenium.

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“…Besides that, another disadvantage of using chemical bath deposition method is low material yield. Another alternative to deposit ZnSe is pulsed laser deposition, with advantage like atomic rate film growth, contamination-free product and remarkable film stoichiometry [3]. On the other hand, because of plume's narrow angular distribution, it leads to lack of uniformity over large area of plume.…”

Section: Introductionmentioning

confidence: 99%

Influence of Applied Potential on Electrodeposited ZnSe/ZnO Nanostructured Films for Photoelectrochemical Cell

Fudzi

Zainal

Lim

et al. 2021

SSP

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Zinc oxide (ZnO) nanorods is widely investigated due to its high photoelectrochemical conversion performance. Further enhancement may be afforded by introducing a metal chalcogenide sensitization layer such as zinc selenide (ZnSe). In this study, ZnO nanorods were electrodeposited with ZnSe at potential range from -0.5 V to -0.9 V vs Ag/AgCl reference electrode. Structural, morphological and optical properties of ZnSe electrodeposited were investigated as a function applied potential by using X-ray diffractometry (XRD), field emission scanning electron microscopy (FESEM), and ultraviolet-visible spectroscopy (UV-Vis). ZnSe electrodeposited for 15 minutes at -0.7 V showed crystallite size of 20.13 nm with the lowest band gap energy of 2.97 eV. The existence of ZnSe particles with the size of 41.8 nm were proven by FESEM images, after ZnSe particles were electrodeposited onto ZnO nanorods that have an average diameter of 62.6 nm and length of 1.6 µm. The photocurrent density generated by samples were measured in a three-electrodes cell incorporated with halogen lamp. The photocurrent generated increased between -0.5 V to -0.7 V before dropped at higher applied potential due to hydrogen evolution process which affected the thin film quality, ultimately affecting photoconversion performance. The highest photocurrent density of 0.2621 mAcm-2 was recorded for samples prepared at -0.7 V vs Ag/AgCl.

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Optical properties of Co-doped ZnSe thin films synthesized by pulsed laser deposition

Cited by 15 publications

References 42 publications

Effect of Cu ratios dopant on ZnSe thin films structural and optical properties

Effect of Cu ratios dopant on ZnSe thin films structural and optical properties

Properties of Electrosynthesized Cobalt Doped Zinc Selenide Thin Films Deposited at Varying Time

Influence of Applied Potential on Electrodeposited ZnSe/ZnO Nanostructured Films for Photoelectrochemical Cell

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